LEADER 05708nam 2200793Ia 450 001 9910817887803321 005 20240404142450.0 010 $a1-281-93792-4 010 $a9786611937928 010 $a981-277-905-1 035 $a(CKB)1000000000552865 035 $a(EBL)1679454 035 $a(OCoLC)879074234 035 $a(SSID)ssj0000221538 035 $a(PQKBManifestationID)11197545 035 $a(PQKBTitleCode)TC0000221538 035 $a(PQKBWorkID)10161508 035 $a(PQKB)11706318 035 $a(MiAaPQ)EBC1679454 035 $a(WSP)00001853 035 $a(Au-PeEL)EBL1679454 035 $a(CaPaEBR)ebr10255759 035 $a(CaONFJC)MIL193792 035 $a(PPN)168149494 035 $a(EXLCZ)991000000000552865 100 $a20080128d2008 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aPhysics and modeling of tera-and nano-devices /$feditors, Maxim Ryzhii, Victor Ryzhii 205 $a1st ed. 210 $aSingapore $cWorld Scientific$dc2008 215 $a1 online resource (194 p.) 225 1 $aSelected topics in electronics and systems ;$vv. 47 300 $aDescription based upon print version of record. 311 $a981-277-904-3 320 $aIncludes bibliographical references. 327 $aCONTENTS; Preface; Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires D. K . Ferry, R . Akis, M. J . Gilbert, A . Cummings and S. M. Ramey; 1. Introduction; 2. Discrete Impurity Scattering Effects; 3. Ballistic Transport in Nano-Devices; 4. Nanowire Devices; 5. Conclusions; References; Polaronic Effects at the Field Effect Junctions for Unconventional Semiconductors N. Kirova; 1. Introduction; 2. Junction with Isotropic Semiconductor; 3. Surface Long Range Polarons in Molecular Crystals; 4. Junction with Conducting Polymer; 5. Conclusions; References 327 $aCellular Monte Carlo Simulation of High Field Transport in Semiconductor Devices S. M. Goodnick and M. Saraniti1. Introduction; 2. Cellular Monte Carlo Method; 3. High Field Transport; 4. CMC Device Modeling; 4.1. SOI and GOI MOSFETs; 4.2. AlGaN/GaN HFETs; Acknowledgments; References; Nanoelectronic Device Simulation Based on the Wigner Function Formalism H. Kosina; 1. Introduction; 2. The Physical Model; 3. Numerical Methods; 3.1. Particle Generation; 3.2. Particle Annihilation; 3.3. Coupling to the Poisson Equation; 4. Results; 5 . Discussion; 5.1. Interpretation of the Results 327 $a5.2. The Bound-states Problem6. Conclusions; Acknowledgment; References; Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org S. Ahmed, G. Klimeck, D. Kearney, M. McLennan and M. P. Anantram; 1. Introduction; 2. Nanoscale Device Simulation: Quantum Effects; 3. Community Nanoscale MOSFET Softwares; 3.1 nanoFET; 3.2 nanoMOS; 3.3 QuaMC; 4. Simulation Results and Discussion; 5. Conclusion; Acknowledgments; References 327 $aPositive Magneto-Resistance in a Point Contact: Possible Manifestation of Interactions V. T. Renard, T. Ota, N. Kumada and H. Hirayama1. Introduction; 2. Experiment; 3. Results and discussion; 4. Conclusion; Acknowledgments; References; Impact of Intrinsic Parameter Fluctuations in Nano-CMOS Devices on Circuits and Systems S. Roy, B. Cheng and A . Asenov; 1. Introduction; 2. Statistical Device Simulation; 3. Impact of Intrinsic Parameter Fluctuations on Circuits; 3.1. Impact of RDF on 6-TSMM Cells; 4. Conclusions; Acknowledgments; References 327 $aHEMT-Based Nanometer Devices Toward Tetrahertz Era E. Sano and T. Otsuji1. Introduction; 2. Present Status of Millimeter-Wave MMICs; 3. Problems in Nanometer-Scale HEMTs; 4. Plasmon Resonant Photomixer; 5. Conclusions; Acknowledgments; References; Plasma Waves in Two-Dimensional Electron Systems and Their Applications V. Ryzhii, I. Khmyrova, M. Ryzhii, A . Satou, T. Otsuji, V. Mitin and M. S. Shur; 1. Introduction; 2. Plasma Waves and Oscillations in 2DEG Channels; 3. Plasma Instabilities 327 $a4. Detection of THz Radiation and Frequency Multiplication Using Resonant Excitation of Plasma Oscillations 330 $a Physics and Modeling of Tera- and Nano-Devices is a compilation of papers by well-respected researchers working in the field of physics and modeling of novel electronic and optoelectronic devices. The topics covered include devices based on carbon nanotubes, generation and detection of terahertz radiation in semiconductor structures including terahertz plasma oscillations and instabilities, terahertz photomixing in semiconductor heterostructures, spin and microwave-induced phenomena in low-dimensional systems, and various computational aspects of device modeling. Researchers as well as 410 0$aSelected topics in electronics and systems ;$vv. 47. 606 $aNanoscience$vCongresses 606 $aNanotechnology$vCongresses 606 $aNanostructured materials$vCongresses 606 $aTerahertz technology$vCongresses 606 $aOptoelectronics$vCongresses 606 $aOptoelectronic devices$vCongresses 615 0$aNanoscience 615 0$aNanotechnology 615 0$aNanostructured materials 615 0$aTerahertz technology 615 0$aOptoelectronics 615 0$aOptoelectronic devices 676 $a620.5 701 $aRyzhii$b Maxim$01609699 701 $aRyzhii$b Victor$0870487 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910817887803321 996 $aPhysics and modeling of tera-and nano-devices$93937065 997 $aUNINA