Electronic Nanodevices

• Autore: Bartolomeo Antonio
• Pubblicazione: MDPI - Multidisciplinary Digital Publishing Institute, 2022
• Descrizione fisica: 1 online resource (240 p.)
• Soggetto topico: History of engineering & technology; Technology: general issues
• Soggetto non controllato: 2D materials; additional capacity; additives; anodes; armchair-edge graphene nanoribbon; band-to-band tunneling; biological chelator; black phosphorus; broadening; carbon nanotube; chemical doping; circuit simulation; compact modeling; concentrator systems; contact resistance; design of experiments; edge contact; electrodes; electron mobility; electrostatic doping; FeFET; ferroelectric; field-effect transistor; GaInP/GaInAs/Ge; GaN HEMTs; GFET; graphene; green synthesis; heat equation; high-frequency; HTL/ETL; junctionless; lithium-ion batteries; metallization; molybdenum oxides; multi-junction; MXenes; n/a; nanoantennas; nanodevices; nanoribbon; nanoscale; negative photoconductivity; NEGF; NEGF simulation; nonvolatile; optics; optoelectronic devices; phosphorene; photosensitivity; phototransistors; photovoltaic technology; photovoltaics; polarization charge; power conversion efficiency; pressure; quantum simulation; quantum transport; rectennas; ReSe2; resistive memories; resistive switching; RF devices; rhenium; SBT; scaling; scattering; selenides; semiconductor memory; solar cells; space; sub-10 nm; subthreshold swing; switching performance; thermal conductivity; thermal model; tolerance analysis; triple-junction; tunnel field effect transistors; zigzag carbon nanotube
• Persona (resp. second.): BartolomeoAntonio
• Sommario/riassunto: The start of high-volume production of field-effect transistors with a feature size below 100 nm at the end of the 20th century signaled the transition from microelectronics to nanoelectronics. Since then, downscaling in the semiconductor industry has continued until the recent development of sub-10 nm technologies. The new phenomena and issues as well as the technological challenges of the fabrication and manipulation at the nanoscale have spurred an intense theoretical and experimental research activity. New device structures, operating principles, materials, and measurement techniques have emerged, and new approaches to electronic transport and device modeling have become necessary. Examples are the introduction of vertical MOSFETs in addition to the planar ones to enable the multi-gate approach as well as the development of new tunneling, high-electron mobility, and single-electron devices. The search for new materials such as nanowires, nanotubes, and 2D materials for the transistor channel, dielectrics, and interconnects has been part of the process. New electronic devices, often consisting of nanoscale heterojunctions, have been developed for light emission, transmission, and detection in optoelectronic and photonic systems, as well for new chemical, biological, and environmental sensors. This Special Issue focuses on the design, fabrication, modeling, and demonstration of nanodevices for electronic, optoelectronic, and sensing applications.
• Titolo autorizzato: Electronic Nanodevices
• ISBN: 3-0365-5022-4
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910619469603321
• Lo trovi qui: Univ. Federico II