LEADER 05083nam 2201321z- 450 001 9910619469603321 005 20221025 010 $a3-0365-5022-4 035 $a(CKB)5670000000391578 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/93168 035 $a(oapen)doab93168 035 $a(EXLCZ)995670000000391578 100 $a20202210d2022 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aElectronic Nanodevices 210 $cMDPI - Multidisciplinary Digital Publishing Institute$d2022 215 $a1 online resource (240 p.) 311 08$a3-0365-5021-6 330 $aThe start of high-volume production of field-effect transistors with a feature size below 100 nm at the end of the 20th century signaled the transition from microelectronics to nanoelectronics. Since then, downscaling in the semiconductor industry has continued until the recent development of sub-10 nm technologies. The new phenomena and issues as well as the technological challenges of the fabrication and manipulation at the nanoscale have spurred an intense theoretical and experimental research activity. New device structures, operating principles, materials, and measurement techniques have emerged, and new approaches to electronic transport and device modeling have become necessary. Examples are the introduction of vertical MOSFETs in addition to the planar ones to enable the multi-gate approach as well as the development of new tunneling, high-electron mobility, and single-electron devices. The search for new materials such as nanowires, nanotubes, and 2D materials for the transistor channel, dielectrics, and interconnects has been part of the process. New electronic devices, often consisting of nanoscale heterojunctions, have been developed for light emission, transmission, and detection in optoelectronic and photonic systems, as well for new chemical, biological, and environmental sensors. This Special Issue focuses on the design, fabrication, modeling, and demonstration of nanodevices for electronic, optoelectronic, and sensing applications. 606 $aHistory of engineering & technology$2bicssc 606 $aTechnology: general issues$2bicssc 610 $a2D materials 610 $aadditional capacity 610 $aadditives 610 $aanodes 610 $aarmchair-edge graphene nanoribbon 610 $aband-to-band tunneling 610 $abiological chelator 610 $ablack phosphorus 610 $abroadening 610 $acarbon nanotube 610 $achemical doping 610 $acircuit simulation 610 $acompact modeling 610 $aconcentrator systems 610 $acontact resistance 610 $adesign of experiments 610 $aedge contact 610 $aelectrodes 610 $aelectron mobility 610 $aelectrostatic doping 610 $aFeFET 610 $aferroelectric 610 $afield-effect transistor 610 $aGaInP/GaInAs/Ge 610 $aGaN HEMTs 610 $aGFET 610 $agraphene 610 $agreen synthesis 610 $aheat equation 610 $ahigh-frequency 610 $aHTL/ETL 610 $ajunctionless 610 $alithium-ion batteries 610 $ametallization 610 $amolybdenum oxides 610 $amulti-junction 610 $aMXenes 610 $an/a 610 $ananoantennas 610 $ananodevices 610 $ananoribbon 610 $ananoscale 610 $anegative photoconductivity 610 $aNEGF 610 $aNEGF simulation 610 $anonvolatile 610 $aoptics 610 $aoptoelectronic devices 610 $aphosphorene 610 $aphotosensitivity 610 $aphototransistors 610 $aphotovoltaic technology 610 $aphotovoltaics 610 $apolarization charge 610 $apower conversion efficiency 610 $apressure 610 $aquantum simulation 610 $aquantum transport 610 $arectennas 610 $aReSe2 610 $aresistive memories 610 $aresistive switching 610 $aRF devices 610 $arhenium 610 $aSBT 610 $ascaling 610 $ascattering 610 $aselenides 610 $asemiconductor memory 610 $asolar cells 610 $aspace 610 $asub-10 nm 610 $asubthreshold swing 610 $aswitching performance 610 $athermal conductivity 610 $athermal model 610 $atolerance analysis 610 $atriple-junction 610 $atunnel field effect transistors 610 $azigzag carbon nanotube 615 7$aHistory of engineering & technology 615 7$aTechnology: general issues 700 $aBartolomeo$b Antonio$4edt$01278672 702 $aBartolomeo$b Antonio$4oth 906 $aBOOK 912 $a9910619469603321 996 $aElectronic Nanodevices$93013709 997 $aUNINA