LEADER 05046nam 2201297z- 450 001 9910619469603321 005 20231214132953.0 010 $a3-0365-5022-4 035 $a(CKB)5670000000391578 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/93168 035 $a(EXLCZ)995670000000391578 100 $a20202210d2022 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aElectronic Nanodevices 210 $cMDPI - Multidisciplinary Digital Publishing Institute$d2022 215 $a1 electronic resource (240 p.) 311 $a3-0365-5021-6 330 $aThe start of high-volume production of field-effect transistors with a feature size below 100 nm at the end of the 20th century signaled the transition from microelectronics to nanoelectronics. Since then, downscaling in the semiconductor industry has continued until the recent development of sub-10 nm technologies. The new phenomena and issues as well as the technological challenges of the fabrication and manipulation at the nanoscale have spurred an intense theoretical and experimental research activity. New device structures, operating principles, materials, and measurement techniques have emerged, and new approaches to electronic transport and device modeling have become necessary. Examples are the introduction of vertical MOSFETs in addition to the planar ones to enable the multi-gate approach as well as the development of new tunneling, high-electron mobility, and single-electron devices. The search for new materials such as nanowires, nanotubes, and 2D materials for the transistor channel, dielectrics, and interconnects has been part of the process. New electronic devices, often consisting of nanoscale heterojunctions, have been developed for light emission, transmission, and detection in optoelectronic and photonic systems, as well for new chemical, biological, and environmental sensors. This Special Issue focuses on the design, fabrication, modeling, and demonstration of nanodevices for electronic, optoelectronic, and sensing applications. 606 $aTechnology: general issues$2bicssc 606 $aHistory of engineering & technology$2bicssc 610 $aconcentrator systems 610 $aGaInP/GaInAs/Ge 610 $amulti-junction 610 $aphotovoltaics 610 $asolar cells 610 $aspace 610 $atriple-junction 610 $aFeFET 610 $aferroelectric 610 $anonvolatile 610 $asemiconductor memory 610 $aSBT 610 $ananoantennas 610 $aoptics 610 $aoptoelectronic devices 610 $aphotovoltaic technology 610 $arectennas 610 $aresistive memories 610 $athermal model 610 $aheat equation 610 $athermal conductivity 610 $acircuit simulation 610 $acompact modeling 610 $aresistive switching 610 $ananodevices 610 $apower conversion efficiency 610 $aMXenes 610 $aelectrodes 610 $aadditives 610 $aHTL/ETL 610 $adesign of experiments 610 $aGFET 610 $agraphene 610 $ahigh-frequency 610 $aRF devices 610 $atolerance analysis 610 $amolybdenum oxides 610 $agreen synthesis 610 $abiological chelator 610 $aadditional capacity 610 $aanodes 610 $alithium-ion batteries 610 $acarbon nanotube 610 $ajunctionless 610 $atunnel field effect transistors 610 $achemical doping 610 $aelectrostatic doping 610 $aNEGF simulation 610 $aband-to-band tunneling 610 $aswitching performance 610 $ananoscale 610 $aphosphorene 610 $ablack phosphorus 610 $ananoribbon 610 $aedge contact 610 $acontact resistance 610 $aquantum transport 610 $aNEGF 610 $ametallization 610 $abroadening 610 $azigzag carbon nanotube 610 $aarmchair-edge graphene nanoribbon 610 $aquantum simulation 610 $asub-10 nm 610 $aphototransistors 610 $aphotosensitivity 610 $asubthreshold swing 610 $aGaN HEMTs 610 $ascaling 610 $aelectron mobility 610 $ascattering 610 $apolarization charge 610 $a2D materials 610 $arhenium 610 $aselenides 610 $aReSe2 610 $afield-effect transistor 610 $apressure 610 $anegative photoconductivity 615 7$aTechnology: general issues 615 7$aHistory of engineering & technology 700 $aBartolomeo$b Antonio$4edt$01278672 702 $aBartolomeo$b Antonio$4oth 906 $aBOOK 912 $a9910619469603321 996 $aElectronic Nanodevices$93013709 997 $aUNINA