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| Autore: |
Lidow Alex
|
| Titolo: |
GaN transistors for efficient power conversion / / Alex Lidow, Michael de Rooij, Johan Strydom, David Reusch, John Glaser
|
| Pubblicazione: | Hoboken, NJ : , : John Wiley & Sons, Inc., , 2020 |
| Edizione: | Third edition. |
| Disciplina: | 621.3815284 |
| Soggetto topico: | Field-effect transistors - Materials |
| Power transistors - Materials | |
| Gallium nitride | |
| Transistors à effet de champ - Matériaux | |
| Transistors de puissance - Matériaux | |
| Nitrure de gallium | |
| Persona (resp. second.): | De RooijMichael |
| StrydomJohan | |
| ReuschDavid | |
| GlaserJohn (Electrical engineer) | |
| Note generali: | "Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. 35% new material including 3 new chapters on Thermal Management, Multi-Level Converters and LiDAR - Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students"-- Provided by publisher. |
| Titolo autorizzato: | GaN transistors for efficient power conversion ![]() |
| ISBN: | 1-5231-2819-4 |
| 1-119-59440-5 | |
| 1-119-59437-5 | |
| 1-119-59442-1 | |
| Formato: | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910830227303321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |