LEADER 02503nam 2200601 450 001 9910830227303321 005 20231206221749.0 010 $a1-5231-2819-4 010 $a1-119-59440-5 010 $a1-119-59437-5 010 $a1-119-59442-1 035 $a(PPN)254152309 035 $a(MiAaPQ)EBC5850455 035 $a(OCoLC)1117279194 035 $a(EXLCZ)994100000009040217 100 $a20190919d2020 uy 0 101 0 $aeng 135 $aurcnu|||||||| 200 10$aGaN transistors for efficient power conversion /$fAlex Lidow, Michael de Rooij, Johan Strydom, David Reusch, John Glaser 205 $aThird edition. 210 1$aHoboken, NJ :$cJohn Wiley & Sons, Inc.,$d2020. 300 $a"Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. 35% new material including 3 new chapters on Thermal Management, Multi-Level Converters and LiDAR - Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students"-- Provided by publisher. 311 $a1-119-59414-6 606 $aField-effect transistors$xMaterials 606 $aPower transistors$xMaterials 606 $aGallium nitride 606 $aTransistors a? effet de champ$xMate?riaux 606 $aTransistors de puissance$xMate?riaux 606 $aNitrure de gallium 606 $aGallium nitride$2fast$3(OCoLC)fst00937295 606 $aPower transistors$xMaterials$2fast$3(OCoLC)fst01074410 615 0$aField-effect transistors$xMaterials. 615 0$aPower transistors$xMaterials. 615 0$aGallium nitride. 615 6$aTransistors a? effet de champ$xMate?riaux. 615 6$aTransistors de puissance$xMate?riaux. 615 6$aNitrure de gallium. 615 7$aGallium nitride. 615 7$aPower transistors$xMaterials. 676 $a621.3815284 700 $aLidow$b Alex$01663715 702 $aDe Rooij$b Michael 702 $aStrydom$b Johan 702 $aReusch$b David 702 $aGlaser$b John$c(Electrical engineer), 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 801 2$bCaOWtU 906 $aBOOK 912 $a9910830227303321 996 $aGaN transistors for efficient power conversion$94021237 997 $aUNINA