Growth mechanisms and novel properties of silicon nanostructures from quantum-mechanical calculations / / Rui-Qin Zhang

• Autore: Zhang Rui-Qin
• Pubblicazione: Heidelberg, Germany : , : Springer, , 2014
• Edizione: 1st ed. 2014.
• Descrizione fisica: 1 online resource (viii, 66 pages) : illustrations (some color)
• Disciplina: 620.5
• Soggetto topico: Nanostructured materials; Silicon - Industrial applications; Quantum theory
• Note generali: "ISSN: 2191-5407."
• Nota di bibliografia: Includes bibliographical references.
• Nota di contenuto: Introduction -- Growth mechanism of silicon nanowires -- Stability of silicon nanostructures -- Novel electronic properties of silicon nanostructures -- Summary and remarks.
• Sommario/riassunto: In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nanotubes, thermal stability of hydrogen terminated silicon nanostructures, size-dependent oxidation of hydrogen terminated silicon nanostructures, excited-state relaxation of hydrogen terminated silicon nanodots, and direct-indirect energy band transitions of silicon nanowires and sheets by surface engineering and straining. He also discusses the potential applications of these findings. This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields.
• Titolo autorizzato: Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations
• ISBN: 3-642-40905-9
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910298462203321
• Lo trovi qui: Univ. Federico II
• Serie: SpringerBriefs in molecular science.