02619oam 2200481 450 991029846220332120190911112726.03-642-40905-910.1007/978-3-642-40905-9(OCoLC)878127651(MiFhGG)GVRL6WQB(EXLCZ)99371000000007471520131025d2014 uy 0engurun|---uuuuatxtccrGrowth mechanisms and novel properties of silicon nanostructures from quantum-mechanical calculations /Rui-Qin Zhang1st ed. 2014.Heidelberg, Germany :Springer,2014.1 online resource (viii, 66 pages) illustrations (some color)SpringerBriefs in Molecular Science,2191-5415"ISSN: 2191-5407."3-642-40904-0 Includes bibliographical references.Introduction -- Growth mechanism of silicon nanowires -- Stability of silicon nanostructures -- Novel electronic properties of silicon nanostructures -- Summary and remarks.In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nanotubes, thermal stability of hydrogen terminated silicon nanostructures, size-dependent oxidation of hydrogen terminated silicon nanostructures, excited-state relaxation of hydrogen terminated silicon nanodots, and direct-indirect energy band transitions of silicon nanowires and sheets by surface engineering and straining. He also discusses the potential applications of these findings. This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields.SpringerBriefs in molecular science.Nanostructured materialsSiliconIndustrial applicationsQuantum theoryNanostructured materials.SiliconIndustrial applications.Quantum theory.620.5Zhang Rui-Qinauthttp://id.loc.gov/vocabulary/relators/aut835968MiFhGGMiFhGGBOOK9910298462203321Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations2529295UNINA