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A FORTRAN program for calculating the electrical parameters of extrinsic silicon / / R. D. Larrabee, W. R. Thurber, W. Murray Bullis
| A FORTRAN program for calculating the electrical parameters of extrinsic silicon / / R. D. Larrabee, W. R. Thurber, W. Murray Bullis |
| Autore | Larrabee R. D |
| Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1980 |
| Descrizione fisica | 1 online resource |
| Altri autori (Persone) |
BullisW. Murray
LarrabeeR. D ThurberW. Robert |
| Collana | NBS special publication |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910709505703321 |
Larrabee R. D
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| Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1980 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Improved characterization and evaluation measurements for HgCdTe detector materials, processes, and devices used on the GOES and TIROS satelites / / D. G. Seiler, J. R. Lowney, W. R. Thurber, J. J. Kopanski, G. G. Harman
| Improved characterization and evaluation measurements for HgCdTe detector materials, processes, and devices used on the GOES and TIROS satelites / / D. G. Seiler, J. R. Lowney, W. R. Thurber, J. J. Kopanski, G. G. Harman |
| Autore | Seiler David G |
| Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1994 |
| Descrizione fisica | 1 online resource |
| Altri autori (Persone) |
HarmanGeorge G
KopanskiJoseph LowneyJ. R SeilerDavid G ThurberW. Robert |
| Collana | NIST special publication |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910711191703321 |
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Seiler David G
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| Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1994 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Measurement techniques for high power semiconductor materials and devices : annual report, October 1, 1979 to September 30, 1980 / / R. C. Larrabee; W. E. Phillips; W. R. Thurber
| Measurement techniques for high power semiconductor materials and devices : annual report, October 1, 1979 to September 30, 1980 / / R. C. Larrabee; W. E. Phillips; W. R. Thurber |
| Autore | Larrabee R. C (Ralph C.) |
| Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1981 |
| Descrizione fisica | 1 online resource |
| Altri autori (Persone) |
LarrabeeR. C (Ralph C.)
PhillipsW. E ThurberW. Robert |
| Collana | NBSIR |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Measurement techniques for high power semiconductor materials and devices |
| Record Nr. | UNINA-9910710273303321 |
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Larrabee R. C (Ralph C.)
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| Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1981 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Measurement techniques for high power semiconductor materials and devices : annual report, October 1, 1980 to December 31, 1981 / / W. R. Thurber; W. E. Phillips; R. D. Larrabee
| Measurement techniques for high power semiconductor materials and devices : annual report, October 1, 1980 to December 31, 1981 / / W. R. Thurber; W. E. Phillips; R. D. Larrabee |
| Autore | Thurber W. Robert |
| Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1982 |
| Descrizione fisica | 1 online resource |
| Altri autori (Persone) |
LarrabeeR. D
PhillipsW. E ThurberW. Robert |
| Collana | NBSIR |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Measurement techniques for high power semiconductor materials and devices |
| Record Nr. | UNINA-9910710255303321 |
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Thurber W. Robert
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| Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1982 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Measurement techniques for high-power semiconductor materials and devices : annual report, January 1, 1982 to March 31, 1983 / / W. R. Thurber; J. R. Lowney; W. E. Phillips
| Measurement techniques for high-power semiconductor materials and devices : annual report, January 1, 1982 to March 31, 1983 / / W. R. Thurber; J. R. Lowney; W. E. Phillips |
| Autore | Thurber W. Robert |
| Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1984 |
| Descrizione fisica | 1 online resource |
| Altri autori (Persone) |
LowneyJ. R
PhillipsW. E ThurberW. Robert |
| Collana | NBSIR |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Measurement techniques for high-power semiconductor materials and devices |
| Record Nr. | UNINA-9910710590703321 |
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Thurber W. Robert
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| Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1984 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Resistivity and carrier lifetime in gold-doped silicon / / W. Robert Thurber; David C. Lewis; W. Murray Bullis
| Resistivity and carrier lifetime in gold-doped silicon / / W. Robert Thurber; David C. Lewis; W. Murray Bullis |
| Autore | Thurber W. Robert |
| Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1973 |
| Descrizione fisica | 1 online resource |
| Altri autori (Persone) |
BullisW. Murray
LewisDavid C ThurberW. Robert |
| Collana | NBSIR |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910710101003321 |
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Thurber W. Robert
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| Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1973 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Theory and application of a two-layer hall technique / / R. D. Larrabee; W. R. Thurber
| Theory and application of a two-layer hall technique / / R. D. Larrabee; W. R. Thurber |
| Autore | Larrabee R. D |
| Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1978 |
| Descrizione fisica | 1 online resource |
| Altri autori (Persone) |
LarrabeeR. D
ThurberW. Robert |
| Collana | NBSIR |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910709911903321 |
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Larrabee R. D
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| Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1978 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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