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Measurement techniques for high power semiconductor materials and devices : annual report, October 1, 1980 to December 31, 1981 / / W. R. Thurber; W. E. Phillips; R. D. Larrabee
| Measurement techniques for high power semiconductor materials and devices : annual report, October 1, 1980 to December 31, 1981 / / W. R. Thurber; W. E. Phillips; R. D. Larrabee |
| Autore | Thurber W. Robert |
| Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1982 |
| Descrizione fisica | 1 online resource |
| Altri autori (Persone) |
LarrabeeR. D
PhillipsW. E ThurberW. Robert |
| Collana | NBSIR |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Measurement techniques for high power semiconductor materials and devices |
| Record Nr. | UNINA-9910710255303321 |
Thurber W. Robert
|
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| Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1982 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Measurement techniques for high-power semiconductor materials and devices : annual report, January 1, 1982 to March 31, 1983 / / W. R. Thurber; J. R. Lowney; W. E. Phillips
| Measurement techniques for high-power semiconductor materials and devices : annual report, January 1, 1982 to March 31, 1983 / / W. R. Thurber; J. R. Lowney; W. E. Phillips |
| Autore | Thurber W. Robert |
| Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1984 |
| Descrizione fisica | 1 online resource |
| Altri autori (Persone) |
LowneyJ. R
PhillipsW. E ThurberW. Robert |
| Collana | NBSIR |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Measurement techniques for high-power semiconductor materials and devices |
| Record Nr. | UNINA-9910710590703321 |
|
Thurber W. Robert
|
||
| Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1984 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Resistivity and carrier lifetime in gold-doped silicon / / W. Robert Thurber; David C. Lewis; W. Murray Bullis
| Resistivity and carrier lifetime in gold-doped silicon / / W. Robert Thurber; David C. Lewis; W. Murray Bullis |
| Autore | Thurber W. Robert |
| Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1973 |
| Descrizione fisica | 1 online resource |
| Altri autori (Persone) |
BullisW. Murray
LewisDavid C ThurberW. Robert |
| Collana | NBSIR |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910710101003321 |
|
Thurber W. Robert
|
||
| Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1973 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||