Fundamentals of tunnel field-effect transistors / / Sneh Saurabh, Indraprastha Institute of Information Technology, Delhi, India, Mamidala Jagadesh Kumar, Indian Institute of Technology, Delhi, India
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| Autore: |
Saurabh Sneh
|
| Titolo: |
Fundamentals of tunnel field-effect transistors / / Sneh Saurabh, Indraprastha Institute of Information Technology, Delhi, India, Mamidala Jagadesh Kumar, Indian Institute of Technology, Delhi, India
|
| Pubblicazione: | Boca Raton, Fla. : , : CRC Press, Taylor & Francis Group, , [2017] |
| ©2017 | |
| Descrizione fisica: | 1 online resource (306 pages) : illustrations |
| Disciplina: | 621.3815284 |
| Soggetto topico: | Tunnel field-effect transistors |
| Integrated circuits - Design and construction | |
| Nanostructured materials | |
| Low voltage integrated circuits | |
| Persona (resp. second.): | KumarMamidala Jagadesh |
| Nota di bibliografia: | Includes bibliographical references at the end of each chapters and index. |
| Nota di contenuto: | 1. CMOS scaling -- 2. Quantum tunneling -- 3. Basics of tunnel field-effect transistor -- 4. Boosting ON-current in tunnel field-effect transistor -- 5. III-V tunnel field effect transistor -- 6. Carbon-based tunnel field-effect transistor -- 7. Nanowire tunnel field-effect transistor -- 8. Models for tunnel field-effect transistor -- 9. Applications of tunnel field-effect transistor -- 10. Future perspective. |
| Sommario/riassunto: | During the last decade, there has been a great deal of interest in TFETs. To the best authors' knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator-- |
| Titolo autorizzato: | Fundamentals of tunnel field-effect transistors |
| ISBN: | 1-315-36735-1 |
| 1-315-35026-2 | |
| 1-4987-6716-8 | |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910148742103321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |