1.

Record Nr.

UNINA9910148742103321

Autore

Saurabh Sneh

Titolo

Fundamentals of tunnel field-effect transistors / / Sneh Saurabh, Indraprastha Institute of Information Technology, Delhi, India, Mamidala Jagadesh Kumar, Indian Institute of Technology, Delhi, India

Pubbl/distr/stampa

Boca Raton, Fla. : , : CRC Press, Taylor & Francis Group, , [2017]

©2017

ISBN

1-315-36735-1

1-315-35026-2

1-4987-6716-8

Descrizione fisica

1 online resource (306 pages) : illustrations

Disciplina

621.3815284

Soggetti

Tunnel field-effect transistors

Integrated circuits - Design and construction

Nanostructured materials

Low voltage integrated circuits

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Nota di bibliografia

Includes bibliographical references at the end of each chapters and index.

Nota di contenuto

1. CMOS scaling -- 2. Quantum tunneling -- 3. Basics of tunnel field-effect transistor -- 4. Boosting ON-current in tunnel field-effect transistor -- 5. III-V tunnel field effect transistor -- 6. Carbon-based tunnel field-effect transistor -- 7. Nanowire tunnel field-effect transistor -- 8. Models for tunnel field-effect transistor -- 9. Applications of tunnel field-effect transistor -- 10. Future perspective.

Sommario/riassunto

During the last decade, there has been a great deal of interest in TFETs. To the best authors' knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial



device simulator--