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Autore: |
Sun Yabin
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Titolo: |
Research on the Radiation Effects and Compact Model of SiGe HBT [[electronic resource] /] / by Yabin Sun
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Pubblicazione: | Singapore : , : Springer Singapore : , : Imprint : Springer, , 2018 |
Edizione: | 1st ed. 2018. |
Descrizione fisica: | 1 online resource (XXIV, 168 p. 171 illus.) |
Disciplina: | 621.381528 |
Soggetto topico: | Electronics |
Microelectronics | |
Semiconductors | |
Optical materials | |
Electronic materials | |
Electronic circuits | |
Solid state physics | |
Electronics and Microelectronics, Instrumentation | |
Optical and Electronic Materials | |
Electronic Circuits and Devices | |
Solid State Physics | |
Nota di bibliografia: | Includes bibliographical references at the end of each chapters and index. |
Nota di contenuto: | Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion. |
Sommario/riassunto: | This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique. |
Titolo autorizzato: | Research on the Radiation Effects and Compact Model of SiGe HBT ![]() |
ISBN: | 981-10-4612-3 |
Formato: | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione: | Inglese |
Record Nr.: | 9910299567203321 |
Lo trovi qui: | Univ. Federico II |
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