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Record Nr. |
UNINA9910299567203321 |
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Autore |
Sun Yabin |
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Titolo |
Research on the Radiation Effects and Compact Model of SiGe HBT [[electronic resource] /] / by Yabin Sun |
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Pubbl/distr/stampa |
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Singapore : , : Springer Singapore : , : Imprint : Springer, , 2018 |
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ISBN |
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Edizione |
[1st ed. 2018.] |
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Descrizione fisica |
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1 online resource (XXIV, 168 p. 171 illus.) |
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Collana |
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Springer Theses, Recognizing Outstanding Ph.D. Research, , 2190-5053 |
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Disciplina |
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Soggetti |
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Electronics |
Microelectronics |
Semiconductors |
Optical materials |
Electronic materials |
Electronic circuits |
Solid state physics |
Electronics and Microelectronics, Instrumentation |
Optical and Electronic Materials |
Electronic Circuits and Devices |
Solid State Physics |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Nota di bibliografia |
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Includes bibliographical references at the end of each chapters and index. |
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Nota di contenuto |
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Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion. |
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Sommario/riassunto |
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This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well |
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