LEDs for lighting applications [[electronic resource] /] / edited by Patrick Mottier

• Pubblicazione: London, : ISTE; Hoboken, NJ, : Wiley, c2009
• Descrizione fisica: 1 online resource (298 p.)
• Disciplina: 621.3815/22; 621.381522
• Soggetto topico: Light emitting diodes; Electric lighting - Equipment and supplies
• Soggetto genere / forma: Electronic books.
• Altri autori: MottierPatrick
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: LEDs for Lighting Applications; Table of Contents; Foreword; Introduction; Chapter 1. Light-Emitting Diodes: Principles and Challenges; 1.1. History of a revolution in the world of the light sources; 1.2. LEDs and lighting; 1.3. Principle of operation, color, efficiency, lifetime and quality of LEDs; 1.3.1. White light production from LEDS: principles and challenges; 1.3.2. Lifetime; 1.3.3. Quality of LEDs; 1.4. Challenges facing LEDs; 1.5. Bibliography; Chapter 2. Substrates for III-Nitride-based Electroluminescent Diodes; 2.1. Introduction ; 2.2. Crystal structure and epitaxial relation with 6H-SiC and Al2O32.3. Defects and constraints due to heteroepitaxy; 2.3.1. Dislocations; 2.3.2. Disorientation of the substrate; 2.3.3. Epitaxial stress; 2.3.4. Thermal stress; 2.4. MOVPE growth of GaN on sapphire; 2.4.1. GaN growth; 2.4.2. Standard 2D epitaxy; 2.4.3. 3D epitaxial growth; 2.4.4. Epitaxial lateral overgrow (ELO 1S); 2.4.5. Anisotropic growth; 2.4.6. Two stage ELO GaN growth (ELO 2S); 2.4.7. GaN growth using pendeo-epitaxy; 2.4.8. Nano epitaxy; 2.5. Bulk nitride substrates ; 2.5.1. HNPS (high nitrogen pressure solution method) for the fabrication of crystalline GaN2.5.2. Ammonothermal synthesis of GaN; 2.5.3. Halide vapor phase epitaxy (HVPE) of GaN; 2.6. Conclusion; 2.7. Bibliography; Chapter 3. III-Nitride High-Brightness Light-Emitting Diodes; 3.1. Introduction; 3.2. p-n junction in GaN; 3.3. Active region: InGaN/GaN quantum well; 3.3.1. Growth and structure; 3.3.2. Optical properties; 3.4. Radiative efficiency; 3.5. Conclusion and prospects; 3.6. Bibliography; Chapter 4. Diode Processing; 4.1. Introduction; 4.2. Orders of magnitude; 4.3. Diode configurations ; 4.3.1. Conventional chip (CC)4.3.2. Flip chip (FC); 4.3.3. Vertical thin film (VTF); 4.3.4. Thin film flip chip (TFFC); 4.4. Light extraction at wafer level; 4.5. Diode processing, etching, contact deposition; 4.5.1. N-type contacts; 4.5.2. P-type contacts; 4.6. Etching; 4.7. Substrate removal; 4.8. Potential evolutions; 4.9. Bibliography; Chapter 5. Packaging; 5.1. Introduction; 5.2. Different packaging processes; 5.2.1. Historical background; 5.2.2. From the wafer to the chip; 5.2.3. Components with connection pins; 5.2.4. SMT leadform components; 5.2.5. SMT "leadless" components ; 5.2.6. Other technologies5.2.7. Conclusion; 5.3. Thermal management; 5.3.1. Motivations; 5.3.2. Heat dissipation modes; 5.3.3. Thermal dissipation in LEDs; 5.3.4. Comparison of different packaging processes; 5.3.5. Conclusion; 5.4. Light extraction in LEDs; 5.4.1. Lateral light extraction in LEDs; 5.4.2. Vertical light extraction through a lens; 5.4.3. Lens/encapsulant materials; 5.4.4. Lenses and encapsulant implementation; 5.5. LED component characteristics; 5.5.1. Thermal and electrical characteristics; 5.5.2. Optical characteristics; 5.5.3. Binning; 5.5.4. Reliability ; 5.6. Conclusion and trends
• Sommario/riassunto: Light Emitting Diodes (LEDs) are no longer confined to use in commercial signage and have now moved firmly, and with unquestioned advantages, into the field of commercial and domestic lighting. This development was prompted in the late 1980s by the invention of the blue LED, a wavelength that had previously been missing from the available LED spectrum and which opened the way to providing white light. Since that point, LED performance (including energy efficiency) has improved dramatically, and now compares with the performance of fluorescent lights - and there remain further performance impro
• Titolo autorizzato: LEDs for lighting applications
• ISBN: 1-282-68721-2; 9786612687211; 1-118-21168-5; 0-470-61201-0; 0-470-61029-8
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910139494603321
• Lo trovi qui: Univ. Federico II
• Serie: ISTE