LEADER 05297nam 2200661Ia 450 001 9910139494603321 005 20170809152956.0 010 $a1-282-68721-2 010 $a9786612687211 010 $a1-118-21168-5 010 $a0-470-61201-0 010 $a0-470-61029-8 035 $a(CKB)2550000000005901 035 $a(EBL)477690 035 $a(OCoLC)609853580 035 $a(SSID)ssj0000354403 035 $a(PQKBManifestationID)11245294 035 $a(PQKBTitleCode)TC0000354403 035 $a(PQKBWorkID)10313168 035 $a(PQKB)11270686 035 $a(MiAaPQ)EBC477690 035 $a(EXLCZ)992550000000005901 100 $a20090407d2009 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aLEDs for lighting applications$b[electronic resource] /$fedited by Patrick Mottier 210 $aLondon $cISTE ;$aHoboken, NJ $cWiley$dc2009 215 $a1 online resource (298 p.) 225 1 $aISTE ;$vv.134 300 $aDescription based upon print version of record. 311 $a1-84821-145-7 320 $aIncludes bibliographical references and index. 327 $aLEDs for Lighting Applications; Table of Contents; Foreword; Introduction; Chapter 1. Light-Emitting Diodes: Principles and Challenges; 1.1. History of a revolution in the world of the light sources; 1.2. LEDs and lighting; 1.3. Principle of operation, color, efficiency, lifetime and quality of LEDs; 1.3.1. White light production from LEDS: principles and challenges; 1.3.2. Lifetime; 1.3.3. Quality of LEDs; 1.4. Challenges facing LEDs; 1.5. Bibliography; Chapter 2. Substrates for III-Nitride-based Electroluminescent Diodes; 2.1. Introduction 327 $a2.2. Crystal structure and epitaxial relation with 6H-SiC and Al2O32.3. Defects and constraints due to heteroepitaxy; 2.3.1. Dislocations; 2.3.2. Disorientation of the substrate; 2.3.3. Epitaxial stress; 2.3.4. Thermal stress; 2.4. MOVPE growth of GaN on sapphire; 2.4.1. GaN growth; 2.4.2. Standard 2D epitaxy; 2.4.3. 3D epitaxial growth; 2.4.4. Epitaxial lateral overgrow (ELO 1S); 2.4.5. Anisotropic growth; 2.4.6. Two stage ELO GaN growth (ELO 2S); 2.4.7. GaN growth using pendeo-epitaxy; 2.4.8. Nano epitaxy; 2.5. Bulk nitride substrates 327 $a2.5.1. HNPS (high nitrogen pressure solution method) for the fabrication of crystalline GaN2.5.2. Ammonothermal synthesis of GaN; 2.5.3. Halide vapor phase epitaxy (HVPE) of GaN; 2.6. Conclusion; 2.7. Bibliography; Chapter 3. III-Nitride High-Brightness Light-Emitting Diodes; 3.1. Introduction; 3.2. p-n junction in GaN; 3.3. Active region: InGaN/GaN quantum well; 3.3.1. Growth and structure; 3.3.2. Optical properties; 3.4. Radiative efficiency; 3.5. Conclusion and prospects; 3.6. Bibliography; Chapter 4. Diode Processing; 4.1. Introduction; 4.2. Orders of magnitude; 4.3. Diode configurations 327 $a4.3.1. Conventional chip (CC)4.3.2. Flip chip (FC); 4.3.3. Vertical thin film (VTF); 4.3.4. Thin film flip chip (TFFC); 4.4. Light extraction at wafer level; 4.5. Diode processing, etching, contact deposition; 4.5.1. N-type contacts; 4.5.2. P-type contacts; 4.6. Etching; 4.7. Substrate removal; 4.8. Potential evolutions; 4.9. Bibliography; Chapter 5. Packaging; 5.1. Introduction; 5.2. Different packaging processes; 5.2.1. Historical background; 5.2.2. From the wafer to the chip; 5.2.3. Components with connection pins; 5.2.4. SMT leadform components; 5.2.5. SMT "leadless" components 327 $a5.2.6. Other technologies5.2.7. Conclusion; 5.3. Thermal management; 5.3.1. Motivations; 5.3.2. Heat dissipation modes; 5.3.3. Thermal dissipation in LEDs; 5.3.4. Comparison of different packaging processes; 5.3.5. Conclusion; 5.4. Light extraction in LEDs; 5.4.1. Lateral light extraction in LEDs; 5.4.2. Vertical light extraction through a lens; 5.4.3. Lens/encapsulant materials; 5.4.4. Lenses and encapsulant implementation; 5.5. LED component characteristics; 5.5.1. Thermal and electrical characteristics; 5.5.2. Optical characteristics; 5.5.3. Binning; 5.5.4. Reliability 327 $a5.6. Conclusion and trends 330 $aLight Emitting Diodes (LEDs) are no longer confined to use in commercial signage and have now moved firmly, and with unquestioned advantages, into the field of commercial and domestic lighting. This development was prompted in the late 1980s by the invention of the blue LED, a wavelength that had previously been missing from the available LED spectrum and which opened the way to providing white light. Since that point, LED performance (including energy efficiency) has improved dramatically, and now compares with the performance of fluorescent lights - and there remain further performance impro 410 0$aISTE 606 $aLight emitting diodes 606 $aElectric lighting$xEquipment and supplies 608 $aElectronic books. 615 0$aLight emitting diodes. 615 0$aElectric lighting$xEquipment and supplies. 676 $a621.3815/22 676 $a621.381522 701 $aMottier$b Patrick$0944253 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910139494603321 996 $aLEDs for lighting applications$92131626 997 $aUNINA