Reliability wearout mechanisms in advanced CMOS technologies / / Alvin W. Strong ... [et al.]

• Pubblicazione: Piscataway, New Jersey : , : IEEE Press, , c2009
• Descrizione fisica: 1 online resource (642 p.)
• Disciplina: 621.39732
• Soggetto topico: Metal oxide semiconductors, Complementary - Reliability; Microelectronics
• Classificazione: ELT 358f; ZN 4960
• Altri autori: StrongAlvin Wayne <1946->
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Introduction / Alvin W. Strong -- Dielectric characterization and reliability methodology / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé -- Dielectric breakdown of gate oxides: physics and experiments / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé -- Negative bias temperature instabilities in pMOSFET devices / Giuseppe LaRosa -- Hot carriers / Stewart E. Rauch, III -- Stress-induced voiding / Timothy D. Sullivan -- Electromigration / Timothy D. Sullivan.
• Sommario/riassunto: A comprehensive treatment of all aspects of CMOS reliability wearout mechanisms This book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent topics, the book covers: Introduction to Reliability Gate Dielectric Reliability Negative Bias
• Titolo autorizzato: Reliability wearout mechanisms in advanced CMOS technologies
• ISBN: 1-282-33149-3; 9786612331497; 0-470-45526-8; 0-470-45525-X
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910830485603321
• Lo trovi qui: Univ. Federico II
• Serie: IEEE Press Series on Microelectronic Systems ; ; 12