LEADER 03079nam 2200649 450 001 9910830485603321 005 20221206093741.0 010 $a1-282-33149-3 010 $a9786612331497 010 $a0-470-45526-8 010 $a0-470-45525-X 024 7 $a10.1002/9780470455265 035 $a(CKB)1000000000807695 035 $a(EBL)739045 035 $a(SSID)ssj0000342280 035 $a(PQKBManifestationID)11259726 035 $a(PQKBTitleCode)TC0000342280 035 $a(PQKBWorkID)10285505 035 $a(PQKB)11296433 035 $a(MiAaPQ)EBC739045 035 $a(CaBNVSL)mat05361029 035 $a(IDAMS)0b00006481178849 035 $a(IEEE)5361029 035 $a(OCoLC)463436649 035 $a(PPN)257509054 035 $a(EXLCZ)991000000000807695 100 $a20110519h20152009 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aReliability wearout mechanisms in advanced CMOS technologies /$fAlvin W. Strong ... [et al.] 210 1$aPiscataway, New Jersey :$cIEEE Press,$dc2009. 215 $a1 online resource (642 p.) 225 1 $aIEEE Press series on microelectronic systems ;$v12 300 $aDescription based upon print version of record. 311 $a0-471-73172-2 320 $aIncludes bibliographical references and index. 327 $aIntroduction / Alvin W. Strong -- Dielectric characterization and reliability methodology / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Sun?e? -- Dielectric breakdown of gate oxides: physics and experiments / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Sun?e? -- Negative bias temperature instabilities in pMOSFET devices / Giuseppe LaRosa -- Hot carriers / Stewart E. Rauch, III -- Stress-induced voiding / Timothy D. Sullivan -- Electromigration / Timothy D. Sullivan. 330 $aA comprehensive treatment of all aspects of CMOS reliability wearout mechanisms This book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent topics, the book covers: Introduction to Reliability Gate Dielectric Reliability Negative Bias 410 0$aIEEE Press Series on Microelectronic Systems ;$v12 606 $aMetal oxide semiconductors, Complementary$xReliability 606 $aMicroelectronics 615 0$aMetal oxide semiconductors, Complementary$xReliability. 615 0$aMicroelectronics. 676 $a621.39732 686 $aELT 358f$2stub 686 $aZN 4960$2rvk 701 $aStrong$b Alvin Wayne$f1946-$0845570 801 0$bCaBNVSL 801 1$bCaBNVSL 801 2$bCaBNVSL 906 $aBOOK 912 $a9910830485603321 996 $aReliability wearout mechanisms in advanced CMOS technologies$91887744 997 $aUNINA