Carrier density and compensation in semiconductors with multi dopants and multi transition energy levels [[electronic resource] ] : the case of Cu impurity in CdTe : preprint / / Su-Huai Wei ... [and others]
(Visualizza in formato marc)
(Visualizza in BIBFRAME)
| Titolo: |
Carrier density and compensation in semiconductors with multi dopants and multi transition energy levels [[electronic resource] ] : the case of Cu impurity in CdTe : preprint / / Su-Huai Wei ... [and others]
|
| Pubblicazione: | [Golden, CO] : , : National Renewable Energy Laboratory, , [2011] |
| Descrizione fisica: | 1 online resource (4 pages) : color illustrations |
| Soggetto topico: | Solar cells - Testing |
| Semiconductor doping | |
| Semiconductor films | |
| Altri autori: |
WeiSu-Huai
|
| Note generali: | Title from title screen (viewed on July 29, 2011). |
| "Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37) Seattle, Washington, June 19-24, 2011." | |
| "July 2011." | |
| Nota di bibliografia: | Includes bibliographical references (page 4). |
| Altri titoli varianti: | Carrier density and compensation in semiconductors with multi dopants and multi transition energy levels |
| Titolo autorizzato: | Carrier density and compensation in semiconductors with multi dopants and multi transition energy levels |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910700742503321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |