LEADER 01862nam  2200445Ia 450 
001 9910700742503321
005 20110729104911.0
035   $a(CKB)5470000002411583
035   $a(OCoLC)743304713
035   $a(EXLCZ)995470000002411583
100   $a20110729d2011      ua             0
101 0 $aeng
135   $aurcn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aCarrier density and compensation in semiconductors with multi dopants and multi transition energy levels$b[electronic resource] $ethe case of Cu impurity in CdTe : preprint /$fSu-Huai Wei ... [and others]
210  1$a[Golden, CO] :$cNational Renewable Energy Laboratory,$d[2011]
215   $a1 online resource (4 pages) $ccolor illustrations
225 1 $aNREL/CP ;$v5900-50683
300   $aTitle from title screen (viewed on July 29, 2011).
300   $a"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37) Seattle, Washington, June 19-24, 2011."
300   $a"July 2011."
320   $aIncludes bibliographical references (page 4).
517   $aCarrier density and compensation in semiconductors with multi dopants and multi transition energy levels 
606   $aSolar cells$xTesting
606   $aSemiconductor doping
606   $aSemiconductor films
615  0$aSolar cells$xTesting.
615  0$aSemiconductor doping.
615  0$aSemiconductor films.
701   $aWei$b Su-Huai$01413284
712 02$aNational Renewable Energy Laboratory (U.S.)
712 12$aIEEE Photovoltaic Specialists Conference$d(37th :$f2011 :$eSeattle, Wash.)
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910700742503321
996   $aCarrier density and compensation in semiconductors with multi dopants and multi transition energy levels$93509652
997   $aUNINA