Vai al contenuto principale della pagina

Nonvolatile memory design : magnetic, resistive, and phase change / / Hai Li, Yiran Chen



(Visualizza in formato marc)    (Visualizza in BIBFRAME)

Autore: Li Hai <1975, > Visualizza persona
Titolo: Nonvolatile memory design : magnetic, resistive, and phase change / / Hai Li, Yiran Chen Visualizza cluster
Pubblicazione: Boca Raton, Fla. : , : CRC Press, , 2012
Descrizione fisica: 1 online resource (200 p.)
Disciplina: 004.568
621.39732
Soggetto topico: Semiconductor storage devices
Magnetic memory (Computers)
Flash memories (Computers)
Change of state (Physics) - Industrial applications
Soggetto genere / forma: Electronic books.
Altri autori: ChenYiran <1976->  
Note generali: Description based upon print version of record.
Nota di bibliografia: Includes bibliographical references.
Nota di contenuto: 1. Introduction to semiconductor memories -- 2. Phase change memory -- 3. Spin-transfer torque RAM -- 4. Resistive random access memory -- 5. Memristors -- 6. The future of nonvolatile memory.
Sommario/riassunto: The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances,
Titolo autorizzato: Nonvolatile memory design  Visualizza cluster
ISBN: 1-280-12159-9
9786613525451
1-4398-0746-9
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9910458158103321
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui