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010   $a1-280-12159-9
010   $a9786613525451
010   $a1-4398-0746-9
024 7 $a10.1201/b11354 
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100   $a20180331d2012      uy             0
101 0 $aeng
135   $aur|n|---|||||
181   $ctxt
182   $cc
183   $acr
200 10$aNonvolatile memory design $emagnetic, resistive, and phase change /$fHai Li, Yiran Chen
210  1$aBoca Raton, Fla. :$cCRC Press,$d2012.
215   $a1 online resource (200 p.)
300   $aDescription based upon print version of record.
311   $a1-138-07663-5 
311   $a1-4398-0745-0 
320   $aIncludes bibliographical references.
327   $a1. Introduction to semiconductor memories -- 2. Phase change memory -- 3. Spin-transfer torque RAM -- 4. Resistive random access memory -- 5. Memristors -- 6. The future of nonvolatile memory.
330   $aThe manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances,
606   $aSemiconductor storage devices
606   $aMagnetic memory (Computers)
606   $aFlash memories (Computers)
606   $aChange of state (Physics)$xIndustrial applications
608   $aElectronic books.
615  0$aSemiconductor storage devices.
615  0$aMagnetic memory (Computers)
615  0$aFlash memories (Computers)
615  0$aChange of state (Physics)$xIndustrial applications.
676   $a004.568
676   $a621.39732
700   $aLi$b Hai$f1975,$0972749
701   $aChen$b Yiran$f1976-$0972750
801  0$bMiAaPQ
801  1$bMiAaPQ
801  2$bMiAaPQ
906   $aBOOK
912   $a9910458158103321
996   $aNonvolatile memory design$92212804
997   $aUNINA