ISTFA 2010 : conference proceedings from the 36th International Symposium for Testing and Failure Analysis, November 14-18, 2010, InterContinental Hotel Dallas, Dallas, Texas, USA / / sponsored by EDFAS--Electronic Device Failure Analysis Society, ISTFA/2010, ASM International

• Pubblicazione: Materials Park, Ohio, : ASM International, 2010
• Descrizione fisica: 1 online resource (486 p.)
• Soggetto topico: Electronics - Materials - Testing; Electronic apparatus and appliances - Testing
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: ""Contents""; ""Combining High-Resolution Pulsed TIVA and Nanoprobing Techniques to Identify Drive Strength Issues in Mixed-signal Circuits""; ""Laser Voltage Imaging: A new Perspective of Laser Voltage Probing""; ""Two-Photon X-Variation Mapping Based on a Diode-Pumped Femtosecond Laser""; ""Quantitative, nanoscale free-carrier concentration mapping using terahertz near-field nanoscopy""; ""Laser-Thermal Imaging""; ""Mobile Diffractive Solid Immersion Lens Design for Backside Laser Based Fault Localization""; ""Volume Electrical Failure Analysis for Product-Specific Yield Enhancement"" ; ""Case Study in Fault Isolation of a Metal Short for Yield Enhancement""""Failure Analysis Methodology on Systematic defect in ADC_PLL Ring Pattern due to Plasma De-chuck Process""; ""Fault Isolation of Sub-surface Leakage Defects Using Electron Beam Induced Current Characterization in Next-Generation Flash Memory Technology Development""; ""A case study: Observation of counter doping of gate poly and its validation in high density 90nm CMOS SRAM Bitcell""; ""Magnetic Microscopy for 3D structures: use of the Simulation Approach for the precise localization of deep buried weak currents"" ; ""Advanced Sample Preparation Method for Lead Free Bump IMC and Solder Grain Image Enhancement""""Extending Acoustic Microscopy for Comprehensive Failure Analysis Applications""; ""Process induced defects in the silicon substrate: Approaches for successful Failure Analysis.""; ""X-sectional Scanning Capacitance Microscopy (SCM) Applications on Deep Submicron Devices at Specific Sites""; ""High Volume and Fast Turnaround Automated Inline TEM Sample Preparation for Manufacturing Process Monitoring""; ""Backscattered Electron Imaging for Embedded Subtle Defects in 32nm Processes"" ; ""Semi-Automated Full Wafer In-line SRAM Failure Analysis By Dual Beam Focused Ion Beam (FIB)""""Simulation Studies of Fluorine-induced Corrosion and Defects on Microchip Al Bondpads in Wafer Fabrication""; ""A Novel Wet Etch In-situ Decapsulation of Devices on Boards""; ""Low Temperature Plasma Decapsulation of Copper-wire-bonded and Exposed Copper Metallization Devices""; ""Decapsulation of Copper Bonded Plastic Encapsulated Integrated Circuits Utilizing Laser Ablation and Mixed Acid Chemistry"" ; ""Photoluminescence and EBIC for Process Control and Failure Analysis in Si-Based Photovoltaics""""Combined electron beam induced current imaging (EBIC) and focused ion beam (FIB) techniques for thin film solar cell characterization""; ""Activation Energy Analysis of Dark and Laser Illuminated I-V Characteristics of Thin-film Poly Silicon Solar Cells""; ""Characterization and failure analysis of 3D integrated semiconductor devices-novel tools for fault isolation, target preparation and high resolution material analysis""; ""A Novel Junction Profiling Methodology"" ; ""Improvement of optical resolution through chip backside using FIB trenches""
• Sommario/riassunto: This volume features research and practical data from the premier event for the microelectronics failure analysis community. The papers cover a wide range of testing and failure analysis topics of practical value to anyone working to detect, understand, and eliminate electronic device and system failures. Case histories and review papers are included, as well as guides to new and unique tools and methodologies, applications and results.
• Titolo autorizzato: ISTFA 2010
• ISBN: 1-68015-510-5; 1-61503-727-6
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9911004850403321
• Lo trovi qui: Univ. Federico II