RF and mm-wave power generation in silicon / / edited by Hua Wang, Kaushik Sengupta ; contributors, David J. Allstot [and thirty-five others]

• Pubblicazione: Amsterdam, Netherlands : , : Academic Press, , 2016; ©2016
• Descrizione fisica: 1 online resource (578 p.)
• Disciplina: 621.384
• Soggetto topico: Millimeter wave devices; Silicon - Electric properties; Millimeter wave communication systems
• Persona (resp. second.): AllstotDavid J.; SenguptaKaushik; WangHua
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Front Cover; RF and mm-Wave Power Generation in Silicon; Copyright Page; Contents; List of Contributors; Biography; Acknowledgment; 1 Introduction; 1.1 What Are the Key PA Performance Metrics?; 1.1.1 PA Output Power; 1.1.2 PA Power Efficiency; 1.1.3 PA Linearity; 1.1.4 PA Robustness to Antenna Load Variations; 1.2 Unique Advantages of Silicon-Based PAs; 1.3 Silicon-Based mm-Wave and THz Signal Generation-A New Frontier; References; I. Power amplifier design methodologies; 2 Power amplifier fundamentals; 2.1 Power Generation and Power Matching; 2.1.1 I-V Curve and Power Generation Capability ; 2.5.1 Ideal Design Formula of Class E Amplifier2.5.2 Real Operation of Class-E Amplifier; 2.5.3 Operation of the Class E PA Beyond Maximum Operation Frequency; Reference; Further Reading; II. RF Power Amplifier Design Examples; 3 CMOS power amplifier design for wireless connectivity applications: a highly linear WLAN power amplifier in advanced SoC CMOS; 3.1 Introduction; 3.2 Design Considerations of Class-AB PA for WLAN; 3.3 Circuit Architecture and Layout Structure; 3.4 Shielded Concentric Transformers; 3.5 Circuit Implementations ; 5 Energy-efficiency enhancement and linear amplifications: a transformer-based Doherty approach5.1 Introduction; 5.2 Optimization of SCT Transformer-Based Doherty Power Amplifiers; 5.2.1 Optimization of 1:1 Transformers; 5.2.2 Optimization of Series-Combining Transformers (SCT) for Doherty Operation; 5.2.2.1 Analysis of SCTs at back-off; 5.2.2.2 Load modulation in SCT transformer-based Doherty PAs; 5.2.2.3 Optimization of SCT transformer-based Doherty PAs; 5.3 Implementation of SCT Transformer-Based Doherty Power Amplifier for WLAN Applications; 5.4 Measurement Results; 5.5 Conclusion ; References
• Titolo autorizzato: RF and mm-wave power generation in silicon
• ISBN: 0-12-409522-4
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910797996803321
• Lo trovi qui: Univ. Federico II