LEADER 03476nam 2200577 450 001 9910797996803321 005 20200520144314.0 010 $a0-12-409522-4 035 $a(CKB)3710000000530067 035 $a(EBL)4188604 035 $a(Au-PeEL)EBL4188604 035 $a(CaPaEBR)ebr11129064 035 $a(CaONFJC)MIL879191 035 $a(OCoLC)932124494 035 $a(MiAaPQ)EBC4188604 035 $a(PPN)193663708 035 $a(EXLCZ)993710000000530067 100 $a20151229h20162016 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $2rdacontent 182 $2rdamedia 183 $2rdacarrier 200 00$aRF and mm-wave power generation in silicon /$fedited by Hua Wang, Kaushik Sengupta ; contributors, David J. Allstot [and thirty-five others] 210 1$aAmsterdam, Netherlands :$cAcademic Press,$d2016. 210 4$dİ2016 215 $a1 online resource (578 p.) 300 $aDescription based upon print version of record. 311 $a0-12-408052-9 320 $aIncludes bibliographical references and index. 327 $aFront Cover; RF and mm-Wave Power Generation in Silicon; Copyright Page; Contents; List of Contributors; Biography; Acknowledgment; 1 Introduction; 1.1 What Are the Key PA Performance Metrics?; 1.1.1 PA Output Power; 1.1.2 PA Power Efficiency; 1.1.3 PA Linearity; 1.1.4 PA Robustness to Antenna Load Variations; 1.2 Unique Advantages of Silicon-Based PAs; 1.3 Silicon-Based mm-Wave and THz Signal Generation-A New Frontier; References; I. Power amplifier design methodologies; 2 Power amplifier fundamentals; 2.1 Power Generation and Power Matching; 2.1.1 I-V Curve and Power Generation Capability 327 $a2.5.1 Ideal Design Formula of Class E Amplifier2.5.2 Real Operation of Class-E Amplifier; 2.5.3 Operation of the Class E PA Beyond Maximum Operation Frequency; Reference; Further Reading; II. RF Power Amplifier Design Examples; 3 CMOS power amplifier design for wireless connectivity applications: a highly linear WLAN power amplifier in advanced SoC CMOS; 3.1 Introduction; 3.2 Design Considerations of Class-AB PA for WLAN; 3.3 Circuit Architecture and Layout Structure; 3.4 Shielded Concentric Transformers; 3.5 Circuit Implementations 327 $a5 Energy-efficiency enhancement and linear amplifications: a transformer-based Doherty approach5.1 Introduction; 5.2 Optimization of SCT Transformer-Based Doherty Power Amplifiers; 5.2.1 Optimization of 1:1 Transformers; 5.2.2 Optimization of Series-Combining Transformers (SCT) for Doherty Operation; 5.2.2.1 Analysis of SCTs at back-off; 5.2.2.2 Load modulation in SCT transformer-based Doherty PAs; 5.2.2.3 Optimization of SCT transformer-based Doherty PAs; 5.3 Implementation of SCT Transformer-Based Doherty Power Amplifier for WLAN Applications; 5.4 Measurement Results; 5.5 Conclusion 327 $aReferences 606 $aMillimeter wave devices 606 $aSilicon$xElectric properties 606 $aMillimeter wave communication systems 615 0$aMillimeter wave devices. 615 0$aSilicon$xElectric properties. 615 0$aMillimeter wave communication systems. 676 $a621.384 702 $aAllstot$b David J. 702 $aSengupta$b Kaushik 702 $aWang$b Hua 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910797996803321 996 $aRF and mm-wave power generation in silicon$93700408 997 $aUNINA