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Analog IC reliability in nanometer CMOS / / Elie Maricau, Georges Gielen



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Autore: Maricau Elie Visualizza persona
Titolo: Analog IC reliability in nanometer CMOS / / Elie Maricau, Georges Gielen Visualizza cluster
Pubblicazione: New York : , : Springer, , 2013
Edizione: 1st ed. 2013.
Descrizione fisica: 1 online resource (xvi, 198 pages) : illustrations (some color)
Disciplina: 621.3815
Soggetto topico: Linear integrated circuits - Reliability
Metal oxide semiconductors, Complementary
Persona (resp. second.): GielenGeorges
Note generali: Description based upon print version of record.
Nota di bibliografia: Includes bibliographical references and index.
Nota di contenuto: Introduction -- CMOS Reliability Overview -- Transistor Aging Compact Modeling -- Background on IC Reliability Simulation -- Analog IC Reliability Simulation -- Integrated Circuit Reliability -- Conclusions.
Sommario/riassunto: This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed.   The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.   ·         Enables readers to understand long-term reliability of an integrated circuit; ·         Reviews CMOS unreliability effects, with focus on those that will emerge in future CMOS nodes; ·         Provides overview of models for key aging effects, as well as compact models that can be included in a circuit simulator, with model parameters for advanced CMOS technology; ·         Describes existing reliability simulators, along with techniques to analyze the impact of process variations and aging on an arbitrary analog circuit.
Titolo autorizzato: Analog IC Reliability in Nanometer CMOS  Visualizza cluster
ISBN: 1-299-19739-6
1-4614-6163-4
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9910438039203321
Lo trovi qui: Univ. Federico II
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Serie: Analog circuits and signal processing series.