CMOS nanoelectronics : innovative devices, architectures, and applications / / edited by Nadine Collaert

• Pubblicazione: Singapore : , : Pan Stanford Pub., , 2013
• Descrizione fisica: 1 online resource (444 p.)
• Disciplina: 621.3815
• Soggetto topico: Molecular electronics; Nanotechnology
• Altri autori: CollaertNadine
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references.
• Nota di contenuto: Front Cover; Contents; Preface; I. Integration of Multi-Gate Devices (FinFET); 1. Introduction to Multi-Gate Devices and Integration Challenges; 2. Dry Etching Patterning Requirements for Multi-Gate Devices; 3. High-k Dielectrics and Metal Gate Electrodes on SOI MuGFETs; 4. Doping, Contact and Strain Architectures for Highly Scaled FinFETs; II. Circuit-Related Aspects; 5. Variability and Its Implications for FinFET SRAM; 6. Specific Features of MuGFETs at High Temperatures over a Wide Frequency Range; 7. ESD Protection in FinFET Technology; III. Exploratory Devices and Characterization Tools ; 8. The Junctionless Nanowire Transistor9. The Variational Principle: A Valuable Ally Assisting the Self-Consistent Solution of Poisson's Equation and Semi-Classical Transport Equations; 10. New Tools for the Direct Characterisation of FinFETS; 11. Dopant Metrology in Advanced FinFETs
• Sommario/riassunto: This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new d
• Titolo autorizzato: CMOS nanoelectronics
• ISBN: 0-429-11283-1; 981-4364-03-7
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910785920503321
• Lo trovi qui: Univ. Federico II