LEADER 01307nam a22002891i 4500 001 991003010289707536 005 20040603093210.0 008 040624s1995 xxua||||||||||||||||eng 020 $a0876612281 035 $ab13011224-39ule_inst 035 $aARCHE-096890$9ExL 040 $aDip.to Beni Culturali$bita$cA.t.i. Arché s.c.r.l. Pandora Sicilia s.r.l. 082 04$a938.5 100 1 $aBoegehold, Alan Lindley$0487997 245 14$aThe lawcourts at Athens :$bsites, buildings, equipment, procedure, and testimonia /$cby Alan L. Boegehold ; with contributions by John McK. Camp II ... [et al.] 260 $aPrinceton :$bThe american school of classical studies at Athens,$c1995 300 $aXXVIII, 256 p., [33] c. di tav. :$bill. ;$c31 cm 440 4$aThe athenian Agora : results of excavations conducted by The american school of classical studies at Athens ;$v28 650 4$aTribunali$zAtene$xStoria 650 4$aDiritto$zAtene$xStoria 700 1 $aCamp, John McKesson 907 $a.b13011224$b02-04-14$c12-07-04 912 $a991003010289707536 945 $aLE001 AR IX 15/24$g1$i2001000127979$lle001$nC. 1$o-$pE0.00$q-$rl$s- $t0$u0$v0$w0$x0$y.i13622791$z12-07-04 996 $aLawcourts at Athens$9283100 997 $aUNISALENTO 998 $ale001$b12-07-04$cm$da $e-$feng$gxxu$h4$i1 LEADER 03176oam 2200601I 450 001 9910785920503321 005 20230803024746.0 010 $a0-429-11283-1 010 $a981-4364-03-7 024 7 $a10.1201/b13063 035 $a(CKB)2670000000272706 035 $a(EBL)1044824 035 $a(OCoLC)815735348 035 $a(SSID)ssj0000778850 035 $a(PQKBManifestationID)11452212 035 $a(PQKBTitleCode)TC0000778850 035 $a(PQKBWorkID)10768693 035 $a(PQKB)10918343 035 $a(MiAaPQ)EBC1044824 035 $a(Au-PeEL)EBL1044824 035 $a(CaPaEBR)ebr10611469 035 $a(CaONFJC)MIL694607 035 $a(OCoLC)892793676 035 $a(EXLCZ)992670000000272706 100 $a20180331d2013 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aCMOS nanoelectronics $einnovative devices, architectures, and applications /$fedited by Nadine Collaert 210 1$aSingapore :$cPan Stanford Pub.,$d2013. 215 $a1 online resource (444 p.) 300 $aDescription based upon print version of record. 311 $a1-322-63325-8 311 $a981-4364-02-9 320 $aIncludes bibliographical references. 327 $aFront Cover; Contents; Preface; I. Integration of Multi-Gate Devices (FinFET); 1. Introduction to Multi-Gate Devices and Integration Challenges; 2. Dry Etching Patterning Requirements for Multi-Gate Devices; 3. High-k Dielectrics and Metal Gate Electrodes on SOI MuGFETs; 4. Doping, Contact and Strain Architectures for Highly Scaled FinFETs; II. Circuit-Related Aspects; 5. Variability and Its Implications for FinFET SRAM; 6. Specific Features of MuGFETs at High Temperatures over a Wide Frequency Range; 7. ESD Protection in FinFET Technology; III. Exploratory Devices and Characterization Tools 327 $a8. The Junctionless Nanowire Transistor9. The Variational Principle: A Valuable Ally Assisting the Self-Consistent Solution of Poisson's Equation and Semi-Classical Transport Equations; 10. New Tools for the Direct Characterisation of FinFETS; 11. Dopant Metrology in Advanced FinFETs 330 $aThis book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new d 606 $aMolecular electronics 606 $aNanotechnology 615 0$aMolecular electronics. 615 0$aNanotechnology. 676 $a621.3815 701 $aCollaert$b Nadine$01576602 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910785920503321 996 $aCMOS nanoelectronics$93854483 997 $aUNINA