Charge-Trapping Non-Volatile Memories : Volume 2--Emerging Materials and Structures / / edited by Panagiotis Dimitrakis

• Pubblicazione: Cham : , : Springer International Publishing : , : Imprint : Springer, , 2017
• Edizione: 1st ed. 2017.
• Descrizione fisica: 1 online resource (V, 211 p. 170 illus., 117 illus. in color.)
• Disciplina: 620.115
• Soggetto topico: Nanotechnology; Electronic circuits; Electronics; Microelectronics; Computer storage devices; Engineering—Materials; Electronic Circuits and Devices; Electronics and Microelectronics, Instrumentation; Memory Structures; Materials Engineering
• Persona (resp. second.): DimitrakisPanagiotis
• Nota di contenuto: Materials and Device Reliability in SONOS Memories -- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices -- Hybrid Memories Based on Redox Molecules -- Organic Floating-Gate Memory Structures -- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer.
• Sommario/riassunto: This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
• Titolo autorizzato: Charge-Trapping Non-Volatile Memories
• ISBN: 3-319-48705-1
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910164981803321
• Lo trovi qui: Univ. Federico II