LEADER 03416nam  22006255  450 
001 9910164981803321
005 20200701094037.0
010   $a3-319-48705-1
024 7 $a10.1007/978-3-319-48705-2
035   $a(CKB)3710000001064919
035   $a(DE-He213)978-3-319-48705-2
035   $a(MiAaPQ)EBC4806612
035   $a(PPN)198872801
035   $a(EXLCZ)993710000001064919
100   $a20170215d2017      u|         0
101 0 $aeng
135   $aurnn|008mamaa
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aCharge-Trapping Non-Volatile Memories $eVolume 2--Emerging Materials and Structures /$fedited by Panagiotis Dimitrakis
205   $a1st ed. 2017.
210  1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2017.
215   $a1 online resource (V, 211 p. 170 illus., 117 illus. in color.) 
311   $a3-319-48703-5 
327   $aMaterials and Device Reliability in SONOS Memories -- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices -- Hybrid Memories Based on Redox Molecules -- Organic Floating-Gate Memory Structures -- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer.
330   $aThis book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
606   $aNanotechnology
606   $aElectronic circuits
606   $aElectronics
606   $aMicroelectronics
606   $aComputer memory systems
606   $aEngineering?Materials
606   $aNanotechnology$3https://scigraph.springernature.com/ontologies/product-market-codes/Z14000
606   $aElectronic Circuits and Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31010
606   $aElectronics and Microelectronics, Instrumentation$3https://scigraph.springernature.com/ontologies/product-market-codes/T24027
606   $aMemory Structures$3https://scigraph.springernature.com/ontologies/product-market-codes/I12034
606   $aMaterials Engineering$3https://scigraph.springernature.com/ontologies/product-market-codes/T28000
615  0$aNanotechnology.
615  0$aElectronic circuits.
615  0$aElectronics.
615  0$aMicroelectronics.
615  0$aComputer memory systems.
615  0$aEngineering?Materials.
615 14$aNanotechnology.
615 24$aElectronic Circuits and Devices.
615 24$aElectronics and Microelectronics, Instrumentation.
615 24$aMemory Structures.
615 24$aMaterials Engineering.
676   $a620.115
702   $aDimitrakis$b Panagiotis$4edt$4http://id.loc.gov/vocabulary/relators/edt
906   $aBOOK
912   $a9910164981803321
996   $aCharge-Trapping Non-Volatile Memories$91561659
997   $aUNINA