LEADER 01007nam0-22003131i-450- 001 990005878670403321 005 20051011144746.0 035 $a000587867 035 $aFED01000587867 035 $a(Aleph)000587867FED01 035 $a000587867 100 $a20000421d1984----km-y0itay50------ba 101 1 $aita 105 $aa-------001yy 200 1 $aQuattro mesi fra i briganti$e1865/66$fJohann Jakob Lichtensteiger$ga cura di Ugo Di Pace ; con un saggio su Raffaele Del Pozzo fotografo dei briganti. 210 $aCava dei Tirreni$cAvagliano$d1984. 215 $a183 p.$cill.$d24 cm 225 1 $a<>memoria e l'immagine 676 $a364.13109457$v21$zita 700 1$aLichtensteiger,$bJohann Jakob$0223758 702 1$aDel Pozzo,$bRaffaele 702 1$aDi Pace,$bUgo 801 0$aIT$bUNINA$gRICA$2UNIMARC 901 $aBK 912 $a990005878670403321 952 $a364.131 LIC 1$bBibl.30644$fFLFBC 959 $aFLFBC 996 $aQuattro mesi fra i briganti$9563770 997 $aUNINA LEADER 03418nam 22006255 450 001 9910164981803321 005 20200701094037.0 010 $a3-319-48705-1 024 7 $a10.1007/978-3-319-48705-2 035 $a(CKB)3710000001064919 035 $a(DE-He213)978-3-319-48705-2 035 $a(MiAaPQ)EBC4806612 035 $a(PPN)198872801 035 $a(EXLCZ)993710000001064919 100 $a20170215d2017 u| 0 101 0 $aeng 135 $aurnn|008mamaa 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aCharge-Trapping Non-Volatile Memories $eVolume 2--Emerging Materials and Structures /$fedited by Panagiotis Dimitrakis 205 $a1st ed. 2017. 210 1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2017. 215 $a1 online resource (V, 211 p. 170 illus., 117 illus. in color.) 311 $a3-319-48703-5 327 $aMaterials and Device Reliability in SONOS Memories -- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices -- Hybrid Memories Based on Redox Molecules -- Organic Floating-Gate Memory Structures -- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer. 330 $aThis book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks. 606 $aNanotechnology 606 $aElectronic circuits 606 $aElectronics 606 $aMicroelectronics 606 $aComputer storage devices 606 $aEngineering?Materials 606 $aNanotechnology$3https://scigraph.springernature.com/ontologies/product-market-codes/Z14000 606 $aElectronic Circuits and Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31010 606 $aElectronics and Microelectronics, Instrumentation$3https://scigraph.springernature.com/ontologies/product-market-codes/T24027 606 $aMemory Structures$3https://scigraph.springernature.com/ontologies/product-market-codes/I12034 606 $aMaterials Engineering$3https://scigraph.springernature.com/ontologies/product-market-codes/T28000 615 0$aNanotechnology. 615 0$aElectronic circuits. 615 0$aElectronics. 615 0$aMicroelectronics. 615 0$aComputer storage devices. 615 0$aEngineering?Materials. 615 14$aNanotechnology. 615 24$aElectronic Circuits and Devices. 615 24$aElectronics and Microelectronics, Instrumentation. 615 24$aMemory Structures. 615 24$aMaterials Engineering. 676 $a620.115 702 $aDimitrakis$b Panagiotis$4edt$4http://id.loc.gov/vocabulary/relators/edt 906 $aBOOK 912 $a9910164981803321 996 $aCharge-Trapping Non-Volatile Memories$91561659 997 $aUNINA