Atomic layer processing : semiconductor dry etching technology / / Thorsten Lill

• Autore: Lill Thorsten
• Pubblicazione: Weinheim, Germany : , : Wiley-VCH GmbH, , [2021]; ©2021
• Descrizione fisica: 1 online resource (301 pages)
• Disciplina: 621.38152
• Soggetto topico: Semiconductors - Etching
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Cover -- Title Page -- Copyright -- Contents -- List of Abbreviations -- Chapter 1 Introduction -- References -- Chapter 2 Fundamentals -- 2.1 Important Performance Metrics of Etching Processes -- 2.1.1 Etching Rate (ER) -- 2.1.2 Etching Rate Nonuniformity (ERNU) -- 2.1.3 Selectivity -- 2.1.4 Profile -- 2.1.5 Critical Dimension (CD) -- 2.1.6 Line Width and Edge Roughness (LWR and LER) -- 2.1.7 Edge Placement Error (EPE) -- 2.1.8 Aspect Ratio‐Dependent Etching (ARDE) -- 2.2 Physisorption and Chemisorption -- 2.3 Desorption -- 2.4 Surface Reactions -- 2.5 Sputtering -- 2.6 Implantation -- 2.7 Diffusion -- 2.8 Transport Phenomena in 3D Features -- 2.8.1 Neutral Transport -- 2.8.2 Ion Transport -- 2.8.3 Transport of Reaction Products -- 2.9 Classification of Etching Technologies -- Problems -- References -- Chapter 3 Thermal Etching -- 3.1 Mechanism and Performance Metrics of Thermal Etching -- 3.1.1 Etching Rate and ERNU -- 3.1.2 Selectivity -- 3.1.3 Profile and CD Control -- 3.1.4 ARDE -- 3.2 Applications Examples -- Problems -- References -- Chapter 4 Thermal Isotropic ALE -- 4.1 Mechanism of Thermal Isotropic ALE -- 4.1.1 Chelation/Condensation ALE -- 4.1.2 Ligand Exchange ALE -- 4.1.3 Conversion ALE -- 4.1.4 Oxidation/Fluorination ALE -- 4.2 Performance Metrics -- 4.2.1 Etching Rate (EPC) -- 4.2.2 ERNU (EPC Nonuniformity) -- 4.2.3 Selectivity -- 4.2.4 Profile and ARDE -- 4.2.5 CD Control -- 4.2.6 Surface Smoothness -- 4.3 Plasma‐Assisted Thermal Isotropic ALE -- 4.4 Applications Examples -- 4.4.1 Area‐Selective Deposition -- 4.4.2 Formation of Lateral Devices -- Problems -- References -- Chapter 5 Radical Etching -- 5.1 Mechanism of Radical Etching -- 5.2 Performance Metrics -- 5.2.1 Etching Rate and ERNU -- 5.2.2 Selectivity -- 5.2.3 Profile and ARDE -- 5.2.4 CD Control -- 5.3 Applications Examples -- Problems -- References. ; Chapter 6 Directional ALE -- 6.1 Mechanism of Directional ALE -- 6.1.1 ALE with Directional Modification Step -- 6.1.2 ALE with Directional Removal Step and Modification by Chemisorption and Diffusion -- 6.1.3 ALE with Directional Removal Step and Modification by Reactive Layer Deposition -- 6.2 Performance Metrics -- 6.2.1 Etching Rate (EPC) -- 6.2.2 ERNU (EPC Nonuniformity) -- 6.2.3 Selectivity -- 6.2.4 Profile and ARDE -- 6.2.5 Surface Smoothness and LWR/LER -- 6.3 Applications Examples -- 6.3.1 ALE with Directional Modification Step -- 6.3.2 ALE with Directional Removal Step and Modification by Chemisorption and Diffusion -- 6.3.3 ALE with Directional Removal Step and Modification by Reactive Layer Deposition -- Problems -- References -- Chapter 7 Reactive Ion Etching -- 7.1 Reactive Ion Etching Mechanisms -- 7.1.1 Simultaneous Species Fluxes -- 7.1.2 Chemical Sputtering -- 7.1.3 Mixed Layer Formation -- 7.1.4 Role of Etching Products -- 7.2 Performance Metrics -- 7.2.1 Etching Rate -- 7.2.2 ERNU -- 7.2.3 ARDE -- 7.2.4 Selectivity -- 7.2.5 Profile Control -- 7.2.5.1 Sidewall Passivation -- 7.2.5.2 Selection of Etching Species -- 7.2.5.3 Temperature -- 7.2.6 CD Control -- 7.2.7 Surface Smoothness -- 7.2.8 LWR/LER -- 7.3 Applications Examples -- 7.3.1 Patterning -- 7.3.1.1 Self‐aligned Patterning -- 7.3.1.2 Extreme Ultraviolet (EUV) Lithography -- 7.3.2 Logic Devices -- 7.3.2.1 Fin Etch -- 7.3.2.2 Gate Etch -- 7.3.2.3 Spacer Etch -- 7.3.2.4 Contact Etch -- 7.3.2.5 BEOL Etch -- 7.3.3 DRAM and 3D NAND Memory -- 7.3.3.1 DRAM Capacitor Cell Etch -- 7.3.3.2 High Aspect Ratio 3D NAND Etch -- 7.3.4 Emerging Memories -- 7.3.4.1 Phase Change Memory (PCM) -- 7.3.4.2 ReRAM -- Problems -- References -- Chapter 8 Ion Beam Etching -- 8.1 Mechanism and Performance Metrics of Ion Beam Etching -- 8.2 Applications Examples -- Problems -- References. ; Chapter 9 Etching Species Generation -- 9.1 Introduction of Low‐Temperature Plasmas -- 9.2 Capacitively Coupled Plasmas -- 9.3 Inductively Coupled Plasmas -- 9.4 Ion Energy Distribution Modulation -- 9.5 Plasma Pulsing -- 9.6 Grid Sources -- Problems -- References -- Chapter 10 Emerging Etching Technologies -- 10.1 Electron‐Assisted Chemical Etching -- 10.2 Photon‐Assisted Chemical Etching -- Problems -- References -- Index -- EULA.
• Titolo autorizzato: Atomic layer processing
• ISBN: 3-527-82419-7; 3-527-82420-0; 3-527-82418-9
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910830463403321
• Lo trovi qui: Univ. Federico II