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Record Nr. |
UNINA9910830463403321 |
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Autore |
Lill Thorsten |
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Titolo |
Atomic layer processing : semiconductor dry etching technology / / Thorsten Lill |
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Pubbl/distr/stampa |
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Weinheim, Germany : , : Wiley-VCH GmbH, , [2021] |
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©2021 |
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ISBN |
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3-527-82419-7 |
3-527-82420-0 |
3-527-82418-9 |
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Descrizione fisica |
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1 online resource (301 pages) |
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Disciplina |
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Soggetti |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Cover -- Title Page -- Copyright -- Contents -- List of Abbreviations -- Chapter 1 Introduction -- References -- Chapter 2 Fundamentals -- 2.1 Important Performance Metrics of Etching Processes -- 2.1.1 Etching Rate (ER) -- 2.1.2 Etching Rate Nonuniformity (ERNU) -- 2.1.3 Selectivity -- 2.1.4 Profile -- 2.1.5 Critical Dimension (CD) -- 2.1.6 Line Width and Edge Roughness (LWR and LER) -- 2.1.7 Edge Placement Error (EPE) -- 2.1.8 Aspect Ratio‐Dependent Etching (ARDE) -- 2.2 Physisorption and Chemisorption -- 2.3 Desorption -- 2.4 Surface Reactions -- 2.5 Sputtering -- 2.6 Implantation -- 2.7 Diffusion -- 2.8 Transport Phenomena in 3D Features -- 2.8.1 Neutral Transport -- 2.8.2 Ion Transport -- 2.8.3 Transport of Reaction Products -- 2.9 Classification of Etching Technologies -- Problems -- References -- Chapter 3 Thermal Etching -- 3.1 Mechanism and Performance Metrics of Thermal Etching -- 3.1.1 Etching Rate and ERNU -- 3.1.2 Selectivity -- 3.1.3 Profile and CD Control -- 3.1.4 ARDE -- 3.2 Applications Examples -- Problems -- References -- Chapter 4 Thermal Isotropic ALE -- 4.1 Mechanism of Thermal Isotropic ALE -- 4.1.1 Chelation/Condensation ALE -- 4.1.2 Ligand Exchange ALE -- 4.1.3 Conversion ALE -- 4.1.4 Oxidation/Fluorination ALE -- 4.2 Performance Metrics -- 4.2.1 Etching Rate (EPC) -- 4.2.2 ERNU (EPC Nonuniformity) -- 4.2.3 Selectivity -- 4.2.4 Profile and ARDE -- 4.2.5 |
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