Dilute nitride semiconductors [[electronic resource] /] / [edited by] M. Henini

• Autore: Henini Mohamed
• Pubblicazione: Amsterdam, : Elsevier, 2005
• Edizione: 1st ed.
• Descrizione fisica: 1 online resource (648 p.)
• Disciplina: 621.38152; 621.3'8152
• Soggetto topico: Semiconductors; Nitrides
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Cover; Frontmatter; Half Title Page; Copyright; Title Page; Copyright; Preface; Contents; 1. MBE Growth and Characterization of Long Wavelength Dilute Nitride III-V Alloys; 1.1. INTRODUCTION; 1.3. DILUTE NITRIDE CHARACTERIZATION; 1.4. ENERGY BAND AND CARRIER TRANSPORT PROPERTIES; 1.6. SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; 2. Epitaxial Growth of Dilute Nitrides by Metal-Organic Vapour Phase Epitaxy; 2.1. INTRODUCTION; 2.2. EPITAXIAL GROWTH OF GaInAsN-BASED STRUCTURES; 2.3. LONG WAVELENGTH GaAs-BASED LASER PERFORMANCES; 2.4. CONCLUSION; ACKNOWLEDGEMENTS; REFERENCES ; 3. The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors3.1. INTRODUCTION TO DILUTE NITRIDE SEMICONDUCTORS; 3.2. THE CHEMICAL BEAM EPITAXIAL/METALORGANIC MOLECULAR BEAM EPITAXIAL (CBE/MOMBE) GROWTH PROCESS; 3.3. CBE OF DILUTE NITRIDE SEMICONDUCTORS; 3.4. FUNDAMENTAL STUDIES OF GaNxAs(1-x) BAND STRUCTURE; 3.5. THE COMPOSITIONS AND PROPERTIES OF DILUTE NITRIDES GROWN BY CBE; 3.6. CBE-GROWN DILUTE NITRIDE DEVICES; 3.7. THE POTENTIAL FOR PRODUCTION CBE OF DILUTE NITRIDES; 3.8. CONCLUSIONS; ACKNOWLEDGEMENTS; REFERENCES ; 4. MOMBE Growth and Characterization of III-V-N Compounds and Application to InAs Quantum DotsABSTRACT; 4.1. INTRODUCTION; 4.2. MOMBE GROWTH AND CHARACTERIZATION OF GaAsN; 4.3. RELATION OF In AND N INCORPORATIONS IN THE GROWTH OF GaInNAs; 4.4. GROWTH AND CHARACTERIZATION OF GaAsNSe NEW ALLOY; 4.5. APPLICATION OF GaAsN TO InAs QUANTUM DOTS; 4.6. SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; 5. Recent Progress in Dilute Nitride Quantum Dots; 5.1. SELF-ORGANIZED QUANTUM DOTS; 5.2. DILUTE NITRIDE QUANTUM DOTS; 5.3. RECENT EXPERIMENTAL PROGRESS IN GaInNAs QDs; 5.4. OTHER KINDS OF DILUTE NITRIDE QDs ; 5.5. SUMMARY AND FUTURE CHALLENGES IN DILUTE NITRIDE QDsACKNOWLEDGEMENTS; REFERENCES; 6. Physics of Isoelectronic Dopants in GaAs; 6.1. NITROGEN ISOELECTRONIC IMPURITIES; 6.2. THE FAILURE OF THE VIRTUAL CRYSTAL APPROXIMATION; 6.3. PREVALENT THEORETICAL MODELS ON DILUTE NITRIDES; 6.4. ELECTROREFLECTANCE STUDY OF GaAsN; 6.5. RESONANT RAMAN SCATTERING STUDY OF CONDUCTION BAND STATES; 6.6. COMPATIBILITY WITH OTHER EXPERIMENTAL RESULTS; 6.7. A COMPLEMENTARY ALLOY: GaAsBi; 6.8. SUMMARY; 6.9. CONCLUSION; REFERENCES ; 7. Measurement of Carrier Localization Degree, Electron Effective Mass, and Exciton Size in InxGa1-xAs1-yNy AlloysABSTRACT; 7.1. INTRODUCTION; 7.2. EXPERIMENTAL; 7.4. MEASUREMENT OF THE ELECTRON EFFECTIVE MASS AND EXCITON WAVE FUNCTION SIZE; 7.5. CONCLUSIONS; ACKNOWLEDGEMENTS; REFERENCES; 8. Probing the "Unusual" Band Structure of Dilute Ga(AsN) Quantum Wells by Magneto-Tunnelling Spectroscopy and Other Techniques; 8.1. INTRODUCTION; 8.2. RESONANT TUNNELLING DIODES BASED ON DILUTE NITRIDES; 8.3. MAGNETO-TUNNELLING SPECTROSCOPY TO PROBE THE CONDUCTION BAND STRUCTURE OF DILUTE NITRIDES ; 8.4. ELECTRONIC PROPERTIES: FROM THE VERY DILUTE REGIME (~0.1%) TO THE DILUTE REGIME
• Sommario/riassunto: * This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. * It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas * Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transpo
• Titolo autorizzato: Dilute nitride semiconductors
• ISBN: 1-280-62834-0; 9786610628346; 0-08-045599-9
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910784537803321
• Lo trovi qui: Univ. Federico II