LEADER 05067nam 2200613Ia 450 001 9910784537803321 005 20230820115701.0 010 $a1-280-62834-0 010 $a9786610628346 010 $a0-08-045599-9 035 $a(CKB)1000000000365281 035 $a(EBL)269577 035 $a(OCoLC)475998008 035 $a(SSID)ssj0000139310 035 $a(PQKBManifestationID)11154887 035 $a(PQKBTitleCode)TC0000139310 035 $a(PQKBWorkID)10008232 035 $a(PQKB)10610298 035 $a(MiAaPQ)EBC269577 035 $a(EXLCZ)991000000000365281 100 $a20040701d2005 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aDilute nitride semiconductors$b[electronic resource] /$f[edited by] M. Henini 205 $a1st ed. 210 $aAmsterdam $cElsevier$d2005 215 $a1 online resource (648 p.) 300 $aDescription based upon print version of record. 311 $a0-08-044502-0 320 $aIncludes bibliographical references and index. 327 $aCover; Frontmatter; Half Title Page; Copyright; Title Page; Copyright; Preface; Contents; 1. MBE Growth and Characterization of Long Wavelength Dilute Nitride III-V Alloys; 1.1. INTRODUCTION; 1.3. DILUTE NITRIDE CHARACTERIZATION; 1.4. ENERGY BAND AND CARRIER TRANSPORT PROPERTIES; 1.6. SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; 2. Epitaxial Growth of Dilute Nitrides by Metal-Organic Vapour Phase Epitaxy; 2.1. INTRODUCTION; 2.2. EPITAXIAL GROWTH OF GaInAsN-BASED STRUCTURES; 2.3. LONG WAVELENGTH GaAs-BASED LASER PERFORMANCES; 2.4. CONCLUSION; ACKNOWLEDGEMENTS; REFERENCES 327 $a3. The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors3.1. INTRODUCTION TO DILUTE NITRIDE SEMICONDUCTORS; 3.2. THE CHEMICAL BEAM EPITAXIAL/METALORGANIC MOLECULAR BEAM EPITAXIAL (CBE/MOMBE) GROWTH PROCESS; 3.3. CBE OF DILUTE NITRIDE SEMICONDUCTORS; 3.4. FUNDAMENTAL STUDIES OF GaNxAs(1-x) BAND STRUCTURE; 3.5. THE COMPOSITIONS AND PROPERTIES OF DILUTE NITRIDES GROWN BY CBE; 3.6. CBE-GROWN DILUTE NITRIDE DEVICES; 3.7. THE POTENTIAL FOR PRODUCTION CBE OF DILUTE NITRIDES; 3.8. CONCLUSIONS; ACKNOWLEDGEMENTS; REFERENCES 327 $a4. MOMBE Growth and Characterization of III-V-N Compounds and Application to InAs Quantum DotsABSTRACT; 4.1. INTRODUCTION; 4.2. MOMBE GROWTH AND CHARACTERIZATION OF GaAsN; 4.3. RELATION OF In AND N INCORPORATIONS IN THE GROWTH OF GaInNAs; 4.4. GROWTH AND CHARACTERIZATION OF GaAsNSe NEW ALLOY; 4.5. APPLICATION OF GaAsN TO InAs QUANTUM DOTS; 4.6. SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; 5. Recent Progress in Dilute Nitride Quantum Dots; 5.1. SELF-ORGANIZED QUANTUM DOTS; 5.2. DILUTE NITRIDE QUANTUM DOTS; 5.3. RECENT EXPERIMENTAL PROGRESS IN GaInNAs QDs; 5.4. OTHER KINDS OF DILUTE NITRIDE QDs 327 $a5.5. SUMMARY AND FUTURE CHALLENGES IN DILUTE NITRIDE QDsACKNOWLEDGEMENTS; REFERENCES; 6. Physics of Isoelectronic Dopants in GaAs; 6.1. NITROGEN ISOELECTRONIC IMPURITIES; 6.2. THE FAILURE OF THE VIRTUAL CRYSTAL APPROXIMATION; 6.3. PREVALENT THEORETICAL MODELS ON DILUTE NITRIDES; 6.4. ELECTROREFLECTANCE STUDY OF GaAsN; 6.5. RESONANT RAMAN SCATTERING STUDY OF CONDUCTION BAND STATES; 6.6. COMPATIBILITY WITH OTHER EXPERIMENTAL RESULTS; 6.7. A COMPLEMENTARY ALLOY: GaAsBi; 6.8. SUMMARY; 6.9. CONCLUSION; REFERENCES 327 $a7. Measurement of Carrier Localization Degree, Electron Effective Mass, and Exciton Size in InxGa1-xAs1-yNy AlloysABSTRACT; 7.1. INTRODUCTION; 7.2. EXPERIMENTAL; 7.4. MEASUREMENT OF THE ELECTRON EFFECTIVE MASS AND EXCITON WAVE FUNCTION SIZE; 7.5. CONCLUSIONS; ACKNOWLEDGEMENTS; REFERENCES; 8. Probing the "Unusual" Band Structure of Dilute Ga(AsN) Quantum Wells by Magneto-Tunnelling Spectroscopy and Other Techniques; 8.1. INTRODUCTION; 8.2. RESONANT TUNNELLING DIODES BASED ON DILUTE NITRIDES; 8.3. MAGNETO-TUNNELLING SPECTROSCOPY TO PROBE THE CONDUCTION BAND STRUCTURE OF DILUTE NITRIDES 327 $a8.4. ELECTRONIC PROPERTIES: FROM THE VERY DILUTE REGIME (~0.1%) TO THE DILUTE REGIME 330 $a* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. * It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas * Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 ?m and 1.55 ?m are very important light sources in optical communications since the optical fiber used as a transpo 606 $aSemiconductors 606 $aNitrides 615 0$aSemiconductors. 615 0$aNitrides. 676 $a621.38152 676 $a621.3'8152 700 $aHenini$b Mohamed$01500604 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910784537803321 996 $aDilute nitride semiconductors$93727343 997 $aUNINA