ISTFA 2014 : conference proceedings from the 40th International Symposium for Testing and Failure Analysis ; November 9-13, 2014, George R. Brown Conversion Center, Houston, Texas, USA / / organized by Electronic Device Failure Analysis Society, ASM International

• Pubblicazione: Materials Park, Ohio : , : ASM International, , 2014; ©2014
• Descrizione fisica: 1 online resource (560 p.)
• Disciplina: 621.381
• Soggetto topico: Electronics - Materials - Testing; Electronic apparatus and appliances - Testing
• Soggetto genere / forma: Electronic books.
• Note generali: Includes index.
• Nota di contenuto: ""Title Page""; ""TitlePage_2014""; ""COPYRight Page""; ""EDFAS 2014 Board of Directors""; ""Organizing Committee-2014""; ""Technical Program Committee - 2014""; ""Contents_2014""; ""ISTFA2014_Combined""; ""cp2014istfa001""; ""cp2014istfa005""; ""cp2014istfa006""; ""cp2014istfa012""; ""cp2014istfa023""; ""cp2014istfa028""; ""cp2014istfa033""; ""cp2014istfa038""; ""cp2014istfa043""; ""cp2014istfa049""; ""cp2014istfa055""; ""cp2014istfa065""; ""cp2014istfa073""; ""cp2014istfa082""; ""cp2014istfa087""; ""cp2014istfa094""; ""cp2014istfa100""; ""cp2014istfa105""; ""cp2014istfa110"" ; ""cp2014istfa115""""cp2014istfa125""; ""cp2014istfa130""; ""cp2014istfa136""; ""cp2014istfa143""; ""cp2014istfa148""; ""cp2014istfa152""; ""cp2014istfa156""; ""cp2014istfa166""; ""cp2014istfa172""; ""cp2014istfa178""; ""cp2014istfa184""; ""Combined_189-536""; ""Analysis of InGaAs Epi Defects by Conductive AFM""; ""Failure analysis of bit line to SNC leakage fail in 2xnm DRAM using Nano- Probing technique""; ""Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage â€? Its Model and Cause""; ""Feature Based Non-Destructive Fault Isolation in Advanced IC Packages"" ; ""Understanding the Cu Void Formation by TEM Failure Analysis""""microPREPTM - A New Laser Tool for High-Throughput Sample Preparation""; ""Using Energy Dispersive Spectroscopy (EDS) to Determine the Resistance of FIB Jumpers for Circuit Edit""; ""New Ion Source for High Precision FIB Nanomachining and Circuit Edit""; ""Evaluation of Power SiC-MOSFET Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy: Imaging of Carrier Distribution and Depletion Layer""; ""Imaging Performance of aSIL Microscopy on Subsurface Imaging of SOI Chips"" ; ""Methods to Reconstruct SEM and Optical Probe Tips using a FIB Tool""""Near-Field Scanning Optical Microscopy for Through-Silicon Imaging and Fault Isolation of Integrated Circuits""; ""Characterization and simulation of a body biased structure in triple-well technology under pulsed photoelectric laser stimulation""; ""Continuous-wave 1064nm laser for Laser Voltage Imaging and Probing Applications""; ""Marginal Failure Diagnosed with LADA: Case Studies.""; ""Sample Preparation for High Numerical Aperture Solid Immersion Lens Laser Imaging""; ""TDR Analysis On Short Transmission Lines"" ; ""Productive Polishing TEM Sample Preparation Methodology Development""""Optimization of TEM Sample Preparation to Reduce the Overlapping of TEM Images""; ""Delayering on Advanced Process Technologies using FIB""; ""Failure Analysis Enhancement by Incorporating a Compact Scan Diagnosis System""; ""Debugging Phase-Locked Loop Failures in Integrated Circuit Products""; ""A Novel Method for the Specified Site Planar View TEM Sample Preparation""; ""Investigation of Protection Layer Materials for Ex-situ â€?lift-outâ€? TEM Sample Preparation with FIB for 14nm FinFET"" ; ""Localization of weak points in thin dielectric layers by Electron Beam Absorbed Current (EBAC) Imaging""
• Titolo autorizzato: ISTFA 2014
• ISBN: 1-62708-075-9; 1-68015-514-8
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910460219703321
• Lo trovi qui: Univ. Federico II