Nitride semiconductor devices : fundamentals and applications / / Hadis Morkoç

• Autore: Morkoç Hadis
• Pubblicazione: Weinheim, : Wiley-VCH, 2013
• Edizione: 1st ed.
• Descrizione fisica: 1 online resource (476 p.)
• Disciplina: 621.38152
• Soggetto topico: Semiconductors - Materials; Nitrides; Gallium nitride; Semiconductor lasers; Light emitting diodes
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Nitride Semiconductor Devices: Fundamentals and Applications; Contents; Preface; 1 General Properties of Nitrides; 1.1 Crystal Structure of Nitrides; 1.2 Gallium Nitride; 1.3 Aluminum Nitride; 1.4 Indium Nitride; 1.5 AlGaN Alloy; 1.6 InGaN Alloy; 1.7 AlInN Alloy; 1.8 InAlGaN Quaternary Alloy; 1.9 Electronic Band Structure and Polarization Effects; 1.9.1 Introduction; 1.9.2 General Strain Considerations; 1.9.3 k-p Theory and the Quasicubic Model; 1.9.4 Temperature Dependence of Wurtzite GaN Bandgap; 1.9.5 Sphalerite (Zincblende) GaN; 1.9.6 AlN; 1.9.6.1 Wurtzite AlN; 1.9.6.2 Zincblende AlN ; 1.9.7 InN1.10 Polarization Effects; 1.10.1 Piezoelectric Polarization; 1.10.2 Spontaneous Polarization; 1.10.3 Nonlinearity of Polarization; 1.10.3.1 Nonlinearities in Piezoelectric Polarization; 1.10.4 Polarization in Heterostructures; 1.10.4.1 Ga-Polarity Single AlGaN-GaN Interface; 1.10.4.2 Polarization in Quantum Wells; 1.11 Nonpolar and Semipolar Orientations; Further Reading; 2 Doping: Determination of Impurity and Carrier Concentrations; 2.1 Introduction; 2.2 Doping; 2.3 Formation Energy of Defects; 2.3.1 Hydrogen and Impurity Trapping at Extended Defects; 2.4 Doping Candidates ; 2.5 Free Carriers2.6 Binding Energy; 2.7 Conductivity Type: Hot Probe and Hall Measurements; 2.8 Measurement of Mobility; 2.9 Semiconductor Statistics, Density of States, and Carrier Concentration; 2.10 Charge Balance Equation and Carrier Concentration; 2.10.1 n-Type Semiconductor; 2.10.2 p-Type Semiconductor; 2.11 Capacitance-Voltage Measurements; Appendix 2.A. Fermi Integral; Further Reading; 3 Metal Contacts; 3.1 Metal-Semiconductor Band Alignment; 3.2 Current Flow in Metal-Semiconductor Junctions; 3.3 Ohmic Contact Resistance; 3.3.1 Specific Contact Resistivity ; 3.4 Semiconductor Resistance3.4.1 Determination of the Contact Resistivity; Further Reading; 4 Carrier Transport; 4.1 Introduction; 4.2 Carrier Scattering; 4.2.1 Impurity Scattering; 4.2.2 Acoustic Phonon Scattering; 4.2.2.1 Deformation Potential Scattering; 4.2.2.2 Piezoelectric Scattering; 4.2.3 Optical Phonon Scattering; 4.2.3.1 Nonpolar Optical Phonon Scattering; 4.2.3.2 Polar Optical Phonon Scattering; 4.2.4 Alloy Scattering and Dislocation Scattering; 4.3 Calculated Mobility of GaN; 4.4 Scattering at High Fields; 4.4.1 Transport at High Fields: Energy and Momentum Relaxation Times ; 4.4.2 Energy-Dependent Relaxation Time and Large B4.4.3 Hall Factor; 4.5 Delineation of Multiple Conduction Layer Mobilities; 4.6 Carrier Transport in InN; 4.7 Carrier Transport in AlN; 4.8 Carrier Transport in Alloys; 4.9 Two-Dimensional Transport in n-Type GaN; 4.9.1 Scattering in 2D Systems; 4.9.1.1 Electron Mobility in AlGaN/GaN 2D System; 4.9.1.2 Numerical Two-Dimensional Electron Gas Mobility Calculations; 4.9.1.3 Magnetotransport and Mobility Spectrum; Further Reading; 5 The p-n Junction; 5.1 Introduction; 5.2 Band Alignment; 5.3 Electrostatic Characteristics of p-n Heterojunctions ; 5.4 Current-Voltage Characteristics of p-n Junctions
• Sommario/riassunto: This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.
• Titolo autorizzato: Nitride semiconductor devices
• ISBN: 3-527-64900-X; 3-527-64903-4; 3-527-64902-6
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910818642003321
• Lo trovi qui: Univ. Federico II