LEADER 05425nam 2200709 a 450 001 9910818642003321 005 20240313201317.0 010 $a3-527-64900-X 010 $a3-527-64903-4 010 $a3-527-64902-6 035 $a(CKB)2670000000356366 035 $a(EBL)1174136 035 $a(OCoLC)850148282 035 $a(SSID)ssj0000884295 035 $a(PQKBManifestationID)11436326 035 $a(PQKBTitleCode)TC0000884295 035 $a(PQKBWorkID)10925459 035 $a(PQKB)10714385 035 $a(MiAaPQ)EBC1174136 035 $a(Au-PeEL)EBL1174136 035 $a(CaPaEBR)ebr10691438 035 $a(CaONFJC)MIL484613 035 $a(EXLCZ)992670000000356366 100 $a20130506d2013 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aNitride semiconductor devices $efundamentals and applications /$fHadis Morkoc? 205 $a1st ed. 210 $aWeinheim $cWiley-VCH$d2013 215 $a1 online resource (476 p.) 300 $aDescription based upon print version of record. 311 $a3-527-41101-1 320 $aIncludes bibliographical references and index. 327 $aNitride Semiconductor Devices: Fundamentals and Applications; Contents; Preface; 1 General Properties of Nitrides; 1.1 Crystal Structure of Nitrides; 1.2 Gallium Nitride; 1.3 Aluminum Nitride; 1.4 Indium Nitride; 1.5 AlGaN Alloy; 1.6 InGaN Alloy; 1.7 AlInN Alloy; 1.8 InAlGaN Quaternary Alloy; 1.9 Electronic Band Structure and Polarization Effects; 1.9.1 Introduction; 1.9.2 General Strain Considerations; 1.9.3 k-p Theory and the Quasicubic Model; 1.9.4 Temperature Dependence of Wurtzite GaN Bandgap; 1.9.5 Sphalerite (Zincblende) GaN; 1.9.6 AlN; 1.9.6.1 Wurtzite AlN; 1.9.6.2 Zincblende AlN 327 $a1.9.7 InN1.10 Polarization Effects; 1.10.1 Piezoelectric Polarization; 1.10.2 Spontaneous Polarization; 1.10.3 Nonlinearity of Polarization; 1.10.3.1 Nonlinearities in Piezoelectric Polarization; 1.10.4 Polarization in Heterostructures; 1.10.4.1 Ga-Polarity Single AlGaN-GaN Interface; 1.10.4.2 Polarization in Quantum Wells; 1.11 Nonpolar and Semipolar Orientations; Further Reading; 2 Doping: Determination of Impurity and Carrier Concentrations; 2.1 Introduction; 2.2 Doping; 2.3 Formation Energy of Defects; 2.3.1 Hydrogen and Impurity Trapping at Extended Defects; 2.4 Doping Candidates 327 $a2.5 Free Carriers2.6 Binding Energy; 2.7 Conductivity Type: Hot Probe and Hall Measurements; 2.8 Measurement of Mobility; 2.9 Semiconductor Statistics, Density of States, and Carrier Concentration; 2.10 Charge Balance Equation and Carrier Concentration; 2.10.1 n-Type Semiconductor; 2.10.2 p-Type Semiconductor; 2.11 Capacitance-Voltage Measurements; Appendix 2.A. Fermi Integral; Further Reading; 3 Metal Contacts; 3.1 Metal-Semiconductor Band Alignment; 3.2 Current Flow in Metal-Semiconductor Junctions; 3.3 Ohmic Contact Resistance; 3.3.1 Specific Contact Resistivity 327 $a3.4 Semiconductor Resistance3.4.1 Determination of the Contact Resistivity; Further Reading; 4 Carrier Transport; 4.1 Introduction; 4.2 Carrier Scattering; 4.2.1 Impurity Scattering; 4.2.2 Acoustic Phonon Scattering; 4.2.2.1 Deformation Potential Scattering; 4.2.2.2 Piezoelectric Scattering; 4.2.3 Optical Phonon Scattering; 4.2.3.1 Nonpolar Optical Phonon Scattering; 4.2.3.2 Polar Optical Phonon Scattering; 4.2.4 Alloy Scattering and Dislocation Scattering; 4.3 Calculated Mobility of GaN; 4.4 Scattering at High Fields; 4.4.1 Transport at High Fields: Energy and Momentum Relaxation Times 327 $a4.4.2 Energy-Dependent Relaxation Time and Large B4.4.3 Hall Factor; 4.5 Delineation of Multiple Conduction Layer Mobilities; 4.6 Carrier Transport in InN; 4.7 Carrier Transport in AlN; 4.8 Carrier Transport in Alloys; 4.9 Two-Dimensional Transport in n-Type GaN; 4.9.1 Scattering in 2D Systems; 4.9.1.1 Electron Mobility in AlGaN/GaN 2D System; 4.9.1.2 Numerical Two-Dimensional Electron Gas Mobility Calculations; 4.9.1.3 Magnetotransport and Mobility Spectrum; Further Reading; 5 The p-n Junction; 5.1 Introduction; 5.2 Band Alignment; 5.3 Electrostatic Characteristics of p-n Heterojunctions 327 $a5.4 Current-Voltage Characteristics of p-n Junctions 330 $a This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry. 606 $aSemiconductors$xMaterials 606 $aNitrides 606 $aGallium nitride 606 $aSemiconductor lasers 606 $aLight emitting diodes 615 0$aSemiconductors$xMaterials. 615 0$aNitrides. 615 0$aGallium nitride. 615 0$aSemiconductor lasers. 615 0$aLight emitting diodes. 676 $a621.38152 700 $aMorkoc?$b Hadis$0920442 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910818642003321 996 $aNitride semiconductor devices$94010517 997 $aUNINA