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HgCDTe system : reference guide / / D. J. Fisher, editor



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Titolo: HgCDTe system : reference guide / / D. J. Fisher, editor Visualizza cluster
Pubblicazione: Stafa-Zuerich, Switzerland : , : TTP, Trans Tech Publications, , [2007]
©2007
Descrizione fisica: 1 online resource (201 p.)
Disciplina: 669.95
Soggetto topico: Physical metallurgy
Diffusion
Solids - Defects
Altri autori: FisherD. J  
Note generali: Description based upon print version of record.
Nota di bibliografia: Includes bibliographical references and indexes.
Nota di contenuto: HgCdTe System - Reference Guide; Table of Contents; Abstracts
Sommario/riassunto: This system, consisting of compositions lying between the end-members, CdTe and HgTe, constitutes perhaps the third most important semiconductor after Si and GaAs. Its importance stems from the ability to tailor the band-gap precisely between that (1.5eV) of the semiconductor, CdTe, and the zero value of the semi-metal, HgTe; giving, in particular, one of the most versatile infra-red detectors known. The intermediate compositions also benefit from the usual mechanisms which improve the mechanical properties of alloys. As an aid to those working on this system, this volume summarizes known diff
Titolo autorizzato: HgCDTe system  Visualizza cluster
ISBN: 3-03813-148-2
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9910789587703321
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Serie: Diffusion and defect data. : Pt. A, . -Defect and diffusion forum ; ; v. 267.