02387nam 22005891 450 991078958770332120230721034422.03-03813-148-2(CKB)3710000000025521(EBL)1869136(SSID)ssj0001127796(PQKBManifestationID)11634362(PQKBTitleCode)TC0001127796(PQKBWorkID)11152749(PQKB)10457050(MiAaPQ)EBC1869136(Au-PeEL)EBL1869136(CaPaEBR)ebr10777855(OCoLC)860712680(EXLCZ)99371000000002552120070910d2007 uy 0engur|n|---|||||txtccrHgCDTe system reference guide /D. J. Fisher, editorStafa-Zuerich, Switzerland :TTP, Trans Tech Publications,[2007]©20071 online resource (201 p.)Defects and diffusion forum,1012-0386 ;v. 267Description based upon print version of record.3-908451-44-2 Includes bibliographical references and indexes.HgCdTe System - Reference Guide; Table of Contents; AbstractsThis system, consisting of compositions lying between the end-members, CdTe and HgTe, constitutes perhaps the third most important semiconductor after Si and GaAs. Its importance stems from the ability to tailor the band-gap precisely between that (1.5eV) of the semiconductor, CdTe, and the zero value of the semi-metal, HgTe; giving, in particular, one of the most versatile infra-red detectors known. The intermediate compositions also benefit from the usual mechanisms which improve the mechanical properties of alloys. As an aid to those working on this system, this volume summarizes known diffDiffusion and defect data.Pt. A,Defect and diffusion forum ;v. 267.Physical metallurgyDiffusionSolidsDefectsPhysical metallurgy.Diffusion.SolidsDefects.669.95Fisher D. J727312MiAaPQMiAaPQMiAaPQBOOK9910789587703321HgCDTe system3710459UNINA