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Designing amplifier circuits / / D. Feucht
| Designing amplifier circuits / / D. Feucht |
| Autore | Feucht Dennis |
| Pubbl/distr/stampa | Raleigh, NC, : SciTech Pub., c2010 |
| Descrizione fisica | 1 online resource (224 p.) |
| Disciplina | 621.3815/35 |
| Collana | Analog circuit design series |
| Soggetto topico |
Amplifiers (Electronics) - Design and construction
Electronic circuit design |
| ISBN |
1-61353-060-9
1-61344-417-6 |
| Classificazione | ZN 5460 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Contents; Chapter 1. Electronic Design; Electronic Design; Product Development; Design-Driven Analysis; Nonlinear Circuit Analysis; Chapter 2. Amplifier Circuits; Bipolar Junction Transistor T Model; The b Transform; Two-Port Networks; Amplifier Configurations; The Transresistance Method; Input and Output Resistances; The Cascade Amplifier; BJT Output Resistance; The Cascode Amplifier; The Effect of Base-Emitter Shunt Resistance; The Darlington Amplifier; The Differential (Emitter-Coupled) Amplifier; Current Mirrors; Matched Transistor Buffers and Complementary Combinations; Closure
Chapter 3. Amplifier ConceptsThe Reduction Theorem; m Transform of BJT and FET T Models; Common-Gate Amplifier with ro; Common-Source Amplifier with ro; Common-Drain Amplifier with ro; FET Cascode Amplifier with ro; Common-Base Amplifier with ro; CC and CE Amplifiers with ro; Loaded Dividers, Source Shifting, and the Substitution Theorem; Closure; Chapter 4. Feedback Amplifiers; Feedback Circuits Block Diagram; Port Resistances with Dependent Sources; General Feedback Circuit; Input Network Summing; Choosing xE, xf, and the Input Network Topology; Two-Port Equivalent Circuits Two-Port Loading TheoremFeedback Analysis Procedure; Noninverting Op-Amp; Inverting Op-Amp; Inverting BJT Amplifier Examples; Noninverting Feedback Amplifier Examples; A Noninverting Feedback Amplifier with Output Block; FET Buffer Amplifier; Feedback Effects on Input and Output Resistance; Miller's Theorem; Noise Rejection by Feedback; Reduction of Nonlinearity with Feedback; Closure; Chapter 5. Multiple-Path Feedback Amplifiers; Multipath Feedback Circuits; Common-Base Amplifier Feedback Analysis; Common-Emitter Amplifier Feedback Analysis; Common-Collector Amplifier Feedback Analysis Inverting Op-Amp with Output ResistanceFeedback Analysis of the Shunt-Feedback Amplifier; Shunt-Feedback Amplifier Substitution Theorem Analysis; Idealized Shunt-Feedback Amplifier; Cascode and Differential Shunt-Feedback Amplifiers; Blackman's Resistance Formula; The Asymptotic Gain Method; Emitter-Coupled Feedback Amplifier; Emitter-Coupled Feedback Amplifier Example; Audiotape Playback Amplifier Examples; Closure; References; Index |
| Record Nr. | UNINA-9911007016803321 |
Feucht Dennis
|
||
| Raleigh, NC, : SciTech Pub., c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Designing dynamic circuit response / / D. Feucht
| Designing dynamic circuit response / / D. Feucht |
| Autore | Feucht Dennis |
| Pubbl/distr/stampa | Raleigh, NC, : SciTech Pub., c2010 |
| Descrizione fisica | 1 online resource (292 p.) |
| Disciplina | 621.3815/35 |
| Collana | Analog circuit design series |
| Soggetto topico |
Frequency response (Dynamics)
Transients (Dynamics) Electronic circuit design |
| ISBN |
1-61353-061-7
1-61344-418-4 |
| Classificazione | ZN 5400 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Contents; Chapter 1. Transient and Frequency Response; Reactive Circuit Elements; First-Order Time-Domain Transient Response; Complex Poles and the Complex Frequency Domain; Second-Order Time-Domain Response: RLC Circuit; Forced Response and Transfer Functions in the s-Domain; The Laplace Transform; Time-Domain Response to a Unit Step Function; Circuit Characterization in the Time Domain; The s-Plane Frequency Response of Transfer Functions; Graphical Representation of Frequency Response; Loci of Quadratic Poles; Optimization of Time-Domain and Frequency-Domain Response
Reactance Chart Transfer Functions of Passive CircuitsClosure; Chapter 2. Dynamic Response Compensation; Passive Compensation: Voltage Divider; Op-Amp Transfer Functions from Reactance Charts; Feedback Circuit Response Representation; Feedback Circuit Stability; Compensation Techniques; Compensator Design: Compensating with Zeros in H; Compensator Design: Reducing Static Loop Gain; Compensator Design: Pole Separation and Parameter Variation; Two-Pole Compensation; Output Load Isolation; Complex Pole Compensation; Compensation by the Direct (Truxal's) Method; Power Supply Bypassing Chapter 3. High-Frequency Impedance TransformationsActive Device Behavior above Bandwidth; BJT High-Frequency Model; Impedance Transformations in the High-Frequency Region; Reactance Chart Representation of b-Gyrated Circuits; Reactance Chart Stability Criteria for Resonances; Emitter-Follower Reactance-Plot Stability Analysis; Emitter-Follower High-Frequency Equivalent Circuit; Emitter-Follower High-Frequency Compensation; Emitter-Follower Resonance Analysis from the Base Circuit; Emitter-Follower Compensation with a Base Series RC; BJT Amplifier with Base Inductance |
| Record Nr. | UNINA-9911007017003321 |
|
Feucht Dennis
|
||
| Raleigh, NC, : SciTech Pub., c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Designing high-performance amplifiers / / D. Feucht
| Designing high-performance amplifiers / / D. Feucht |
| Autore | Feucht Dennis |
| Pubbl/distr/stampa | Raleigh, NC, : SciTech Pub., c2010 |
| Descrizione fisica | 1 online resource (226 p.) |
| Disciplina | 621.3815/35 |
| Collana | Analog circuit design series |
| Soggetto topico |
Amplifiers (Electronics) - Design and construction
Electronic circuit design |
| ISBN |
1-61353-062-5
1-61344-419-2 |
| Classificazione | ZN 5460 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Contents; Chapter 1. Wideband Amplification; Multiple-Stage Response Characteristics; Amplifier Stage Gain Optimization; Pole Determination by Circuit Inspection; Inductive Peaking; Bootstrap Speed-Up Circuit; Source-Follower Compensation; Emitter Compensation; Cascode Compensation of the Common-Base Stage; Compensation Network Synthesis; Differential-Amplifier Compensation; Shunt-Feedback Amplifier Design; Shunt-Feedback Cascode & Darlington Amplifiers; Closure; Chapter 2. Precision Amplification; Causes of Degradation in Precision; Intrinsic Noise; Extrinsic Noise: Radiation & Crosstalk
Extrinsic Noise: Conductive InterferenceDifferential Amplifiers; Instrumentation Amplifiers; Low-Level Amplification and Component Characteristics; Isolation Amplifiers; Autocalibration; Distortion; Transconductance Linearity of BJT Diff-Amp; BJT and FET Diff-Amp Temperature Characteristics; Thermal Distortion; Complementary Emitter-Follower Output Amplifier; Buffer Amplifier Design; Chapter 3. High-Performance Amplification; Current-Input & Current-Feedback Amplifiers; Split-Path, Low-Frequency Feedback and Feedbeside Amplifiers; Feedforward and Linearized Differential Cascode Amplifiers α-Compensated Gain CellsfT Multipliers; High-Performance Buffer Amplifiers; Unipolar Voltage-Translating Amplifiers; Bootstrapped Input Stages; Composite-Feedback & Large-Signal Dynamic Compensation; The Gilbert Gain Cell and Multiplier; Programmable-Gain Amplifiers; References; Index |
| Record Nr. | UNINA-9911007017703321 |
|
Feucht Dennis
|
||
| Raleigh, NC, : SciTech Pub., c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Fundamentals of RF and microwave transistor amplifiers [[electronic resource] /] / Inder Bahl
| Fundamentals of RF and microwave transistor amplifiers [[electronic resource] /] / Inder Bahl |
| Autore | Bahl I. J |
| Pubbl/distr/stampa | Oxford, : Wiley, 2009 |
| Descrizione fisica | 1 online resource (697 p.) |
| Disciplina |
621.3815/35
621.381535 |
| Soggetto topico |
Amplifiers, Radio frequency
Microwave amplifiers Transistor amplifiers |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-282-36840-0
9786612368400 0-470-46234-5 0-470-46231-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Fundamentals of RF and Microwave Transistor Amplifiers; Contents in Brief; Contents; Foreword; Preface; 1. Introduction; 1.1. Transistor Amplifier; 1.2. Early History of Transistor Amplifiers; 1.3. Benefits of Transistor Amplifiers; 1.4. Transistors; 1.5. Design of Amplifiers; 1.6. Amplifier Manufacturing Technologies; 1.7. Applications of Amplifiers; 1.8. Amplifier Cost; 1.9. Current Trends; 1.10. Book Organization; References; 2. Linear Network Analysis; 2.1. Impedance Matrix; 2.2. Admittance Matrix; 2.3. ABCD Parameters; 2.4. S-Parameters; 2.4.1. S-Parameters for a One-Port Network
2.5. Relationships Between Various Two-Port ParametersReferences; Problems; 3. Amplifier Characteristics and Definitions; 3.1. Bandwidth; 3.2. Power Gain; 3.3. Input and Output VSWR; 3.4. Output Power; 3.5. Power Added Efficiency; 3.6. Intermodulation Distortion; 3.6.1. IP3; 3.6.2. ACPR; 3.6.3. EVM; 3.7. Harmonic Power; 3.8. Peak-to-Average Ratio; 3.9. Combiner Efficiency; 3.10. Noise Characterization; 3.10.1. Noise Figure; 3.10.2. Noise Temperature; 3.10.3. Noise Bandwidth; 3.10.4. Optimum Noise Match; 3.10.5. Constant Noise Figure and Gain Circles; 3.10.6. Simultaneous Input and Noise Match 3.11. Dynamic Range3.12. Multistage Amplifier Characteristics; 3.12.1. Multistage IP3; 3.12.2. Multistage PAE; 3.12.3. Multistage NF; 3.13. Gate and Drain Pushing Factors; 3.14. Amplifier Temperature Coefficient; 3.15. Mean Time to Failure; References; Problems; 4. Transistors; 4.1. Transistor Types; 4.2. Silicon Bipolar Transistor; 4.2.1. Figure of Merit; 4.2.2. High-Frequency Noise Performance of Silicon BJT; 4.2.3. Power Performance; 4.3. GaAs MESFET; 4.3.1. Small-Signal Equivalent Circuit; 4.3.2. Figure of Merit; 4.3.3. High-Frequency Noise Properties of MESFETs 4.4. Heterojunction Field Effect Transistor4.4.1. High-Frequency Noise Properties of HEMTs; 4.4.2. Indium Phosphide pHEMTs; 4.5. Heterojunction Bipolar Transistors; 4.5.1. High-Frequency Noise Properties of HBTs; 4.5.2. SiGe Heterojunction Bipolar Transistors; 4.6. MOSFET; References; Problems; 5. Transistor Models; 5.1. Transistor Model Types; 5.1.1. Physics/Electromagnetic Theory Based Models; 5.1.2. Analytical or Hybrid Models; 5.1.3. Measurement Based Models; 5.2. MESFET Models; 5.2.1. Linear Models; 5.2.2. Nonlinear Models; 5.3. pHEMT Models; 5.3.1. Linear Models; 5.3.2. Nonlinear Models 5.4. HBT Model5.5. MOSFET Models; 5.6. BJT Models; 5.7. Transistor Model Scaling; 5.8. Source-Pull and Load-Pull Data; 5.8.1. Theoretical Load-Pull Data; 5.8.2. Measured Power and PAE Source Pull and Load Pull; 5.8.3. Measured IP3 Source and Load Impedance; 5.8.4. Source and Load Impedance Scaling; 5.9. Temperature-Dependent Models; References; Problems; 6. Matching Network Components; 6.1. Impedance Matching Elements; 6.2. Transmission Line Matching Elements; 6.2.1. Microstrip; 6.2.2. Coplanar Lines; 6.3. Lumped Elements; 6.3.1. Capacitors; 6.3.2. Inductors; 6.3.3. Resistors 6.4. Bond Wire Inductors |
| Record Nr. | UNINA-9910139979603321 |
|
Bahl I. J
|
||
| Oxford, : Wiley, 2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Fundamentals of RF and microwave transistor amplifiers [[electronic resource] /] / Inder Bahl
| Fundamentals of RF and microwave transistor amplifiers [[electronic resource] /] / Inder Bahl |
| Autore | Bahl I. J |
| Pubbl/distr/stampa | Oxford, : Wiley, 2009 |
| Descrizione fisica | 1 online resource (697 p.) |
| Disciplina |
621.3815/35
621.381535 |
| Soggetto topico |
Amplifiers, Radio frequency
Microwave amplifiers Transistor amplifiers |
| ISBN |
1-282-36840-0
9786612368400 0-470-46234-5 0-470-46231-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Fundamentals of RF and Microwave Transistor Amplifiers; Contents in Brief; Contents; Foreword; Preface; 1. Introduction; 1.1. Transistor Amplifier; 1.2. Early History of Transistor Amplifiers; 1.3. Benefits of Transistor Amplifiers; 1.4. Transistors; 1.5. Design of Amplifiers; 1.6. Amplifier Manufacturing Technologies; 1.7. Applications of Amplifiers; 1.8. Amplifier Cost; 1.9. Current Trends; 1.10. Book Organization; References; 2. Linear Network Analysis; 2.1. Impedance Matrix; 2.2. Admittance Matrix; 2.3. ABCD Parameters; 2.4. S-Parameters; 2.4.1. S-Parameters for a One-Port Network
2.5. Relationships Between Various Two-Port ParametersReferences; Problems; 3. Amplifier Characteristics and Definitions; 3.1. Bandwidth; 3.2. Power Gain; 3.3. Input and Output VSWR; 3.4. Output Power; 3.5. Power Added Efficiency; 3.6. Intermodulation Distortion; 3.6.1. IP3; 3.6.2. ACPR; 3.6.3. EVM; 3.7. Harmonic Power; 3.8. Peak-to-Average Ratio; 3.9. Combiner Efficiency; 3.10. Noise Characterization; 3.10.1. Noise Figure; 3.10.2. Noise Temperature; 3.10.3. Noise Bandwidth; 3.10.4. Optimum Noise Match; 3.10.5. Constant Noise Figure and Gain Circles; 3.10.6. Simultaneous Input and Noise Match 3.11. Dynamic Range3.12. Multistage Amplifier Characteristics; 3.12.1. Multistage IP3; 3.12.2. Multistage PAE; 3.12.3. Multistage NF; 3.13. Gate and Drain Pushing Factors; 3.14. Amplifier Temperature Coefficient; 3.15. Mean Time to Failure; References; Problems; 4. Transistors; 4.1. Transistor Types; 4.2. Silicon Bipolar Transistor; 4.2.1. Figure of Merit; 4.2.2. High-Frequency Noise Performance of Silicon BJT; 4.2.3. Power Performance; 4.3. GaAs MESFET; 4.3.1. Small-Signal Equivalent Circuit; 4.3.2. Figure of Merit; 4.3.3. High-Frequency Noise Properties of MESFETs 4.4. Heterojunction Field Effect Transistor4.4.1. High-Frequency Noise Properties of HEMTs; 4.4.2. Indium Phosphide pHEMTs; 4.5. Heterojunction Bipolar Transistors; 4.5.1. High-Frequency Noise Properties of HBTs; 4.5.2. SiGe Heterojunction Bipolar Transistors; 4.6. MOSFET; References; Problems; 5. Transistor Models; 5.1. Transistor Model Types; 5.1.1. Physics/Electromagnetic Theory Based Models; 5.1.2. Analytical or Hybrid Models; 5.1.3. Measurement Based Models; 5.2. MESFET Models; 5.2.1. Linear Models; 5.2.2. Nonlinear Models; 5.3. pHEMT Models; 5.3.1. Linear Models; 5.3.2. Nonlinear Models 5.4. HBT Model5.5. MOSFET Models; 5.6. BJT Models; 5.7. Transistor Model Scaling; 5.8. Source-Pull and Load-Pull Data; 5.8.1. Theoretical Load-Pull Data; 5.8.2. Measured Power and PAE Source Pull and Load Pull; 5.8.3. Measured IP3 Source and Load Impedance; 5.8.4. Source and Load Impedance Scaling; 5.9. Temperature-Dependent Models; References; Problems; 6. Matching Network Components; 6.1. Impedance Matching Elements; 6.2. Transmission Line Matching Elements; 6.2.1. Microstrip; 6.2.2. Coplanar Lines; 6.3. Lumped Elements; 6.3.1. Capacitors; 6.3.2. Inductors; 6.3.3. Resistors 6.4. Bond Wire Inductors |
| Record Nr. | UNINA-9910831054003321 |
|
Bahl I. J
|
||
| Oxford, : Wiley, 2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Fundamentals of RF and microwave transistor amplifiers / / Inder Bahl
| Fundamentals of RF and microwave transistor amplifiers / / Inder Bahl |
| Autore | Bahl I. J |
| Pubbl/distr/stampa | Oxford, : Wiley, 2009 |
| Descrizione fisica | 1 online resource (697 p.) |
| Disciplina |
621.3815/35
621.381535 |
| Soggetto topico |
Amplifiers, Radio frequency
Microwave amplifiers Transistor amplifiers |
| ISBN |
9786612368400
9781282368408 1282368400 9780470462348 0470462345 9780470462317 0470462310 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Fundamentals of RF and Microwave Transistor Amplifiers; Contents in Brief; Contents; Foreword; Preface; 1. Introduction; 1.1. Transistor Amplifier; 1.2. Early History of Transistor Amplifiers; 1.3. Benefits of Transistor Amplifiers; 1.4. Transistors; 1.5. Design of Amplifiers; 1.6. Amplifier Manufacturing Technologies; 1.7. Applications of Amplifiers; 1.8. Amplifier Cost; 1.9. Current Trends; 1.10. Book Organization; References; 2. Linear Network Analysis; 2.1. Impedance Matrix; 2.2. Admittance Matrix; 2.3. ABCD Parameters; 2.4. S-Parameters; 2.4.1. S-Parameters for a One-Port Network
2.5. Relationships Between Various Two-Port ParametersReferences; Problems; 3. Amplifier Characteristics and Definitions; 3.1. Bandwidth; 3.2. Power Gain; 3.3. Input and Output VSWR; 3.4. Output Power; 3.5. Power Added Efficiency; 3.6. Intermodulation Distortion; 3.6.1. IP3; 3.6.2. ACPR; 3.6.3. EVM; 3.7. Harmonic Power; 3.8. Peak-to-Average Ratio; 3.9. Combiner Efficiency; 3.10. Noise Characterization; 3.10.1. Noise Figure; 3.10.2. Noise Temperature; 3.10.3. Noise Bandwidth; 3.10.4. Optimum Noise Match; 3.10.5. Constant Noise Figure and Gain Circles; 3.10.6. Simultaneous Input and Noise Match 3.11. Dynamic Range3.12. Multistage Amplifier Characteristics; 3.12.1. Multistage IP3; 3.12.2. Multistage PAE; 3.12.3. Multistage NF; 3.13. Gate and Drain Pushing Factors; 3.14. Amplifier Temperature Coefficient; 3.15. Mean Time to Failure; References; Problems; 4. Transistors; 4.1. Transistor Types; 4.2. Silicon Bipolar Transistor; 4.2.1. Figure of Merit; 4.2.2. High-Frequency Noise Performance of Silicon BJT; 4.2.3. Power Performance; 4.3. GaAs MESFET; 4.3.1. Small-Signal Equivalent Circuit; 4.3.2. Figure of Merit; 4.3.3. High-Frequency Noise Properties of MESFETs 4.4. Heterojunction Field Effect Transistor4.4.1. High-Frequency Noise Properties of HEMTs; 4.4.2. Indium Phosphide pHEMTs; 4.5. Heterojunction Bipolar Transistors; 4.5.1. High-Frequency Noise Properties of HBTs; 4.5.2. SiGe Heterojunction Bipolar Transistors; 4.6. MOSFET; References; Problems; 5. Transistor Models; 5.1. Transistor Model Types; 5.1.1. Physics/Electromagnetic Theory Based Models; 5.1.2. Analytical or Hybrid Models; 5.1.3. Measurement Based Models; 5.2. MESFET Models; 5.2.1. Linear Models; 5.2.2. Nonlinear Models; 5.3. pHEMT Models; 5.3.1. Linear Models; 5.3.2. Nonlinear Models 5.4. HBT Model5.5. MOSFET Models; 5.6. BJT Models; 5.7. Transistor Model Scaling; 5.8. Source-Pull and Load-Pull Data; 5.8.1. Theoretical Load-Pull Data; 5.8.2. Measured Power and PAE Source Pull and Load Pull; 5.8.3. Measured IP3 Source and Load Impedance; 5.8.4. Source and Load Impedance Scaling; 5.9. Temperature-Dependent Models; References; Problems; 6. Matching Network Components; 6.1. Impedance Matching Elements; 6.2. Transmission Line Matching Elements; 6.2.1. Microstrip; 6.2.2. Coplanar Lines; 6.3. Lumped Elements; 6.3.1. Capacitors; 6.3.2. Inductors; 6.3.3. Resistors 6.4. Bond Wire Inductors |
| Record Nr. | UNINA-9911020432703321 |
|
Bahl I. J
|
||
| Oxford, : Wiley, 2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Thulium-doped fiber amplifier, numerical and experimental approach / / S.D. Emami [and three others]
| Thulium-doped fiber amplifier, numerical and experimental approach / / S.D. Emami [and three others] |
| Autore | Emami S. D |
| Pubbl/distr/stampa | New York : , : Novinka, , 2011 |
| Descrizione fisica | 1 online resource (91 pages) : illustrations |
| Disciplina | 621.3815/35 |
| Collana | Lasers and Electro-Optics Research and Technology |
| Soggetto topico |
Optical amplifiers - Materials
Thulium Raman effect |
| ISBN | 1-61324-759-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Fiber optic amplifiers -- Thulium doped fiber amplifier -- Hybrid thulium doped fiber amplifier and a fiber raman amplifier. |
| Record Nr. | UNINA-9910136581803321 |
|
Emami S. D
|
||
| New York : , : Novinka, , 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||