2000 International Symposium on High Performance Electron Devices for Microwave, Optoelectronic Applications

• Pubblicazione: [Place of publication not identified], : I E E E, 2000
• Descrizione fisica: 1 online resource
• Disciplina: 621.381045
• Soggetto topico: Optoelectronics
• Note generali: Bibliographic Level Mode of Issuance: Monograph
• Nota di contenuto: Advances in III-V transistors (HEMTs and HBTs) for mm-wave applications; High speed laser diodes, optical modulators and photodetectors; Si and SiGe based devices for RF and optoelectronics applications; Modelling of microwave and optoelectronic devices; Wide bandgap devices for microwave and optoelectronic applications; Novel material (semiconductor/polymer/amorphous) optoelectronic and microwave devices; Low distortion microwave devices for efficient mixer and power amplifier applications; Optical control of microwave and mm-wave devices; Microwave and optoelectronic photonic crystal devices; Components for fibre radio applications.
• Sommario/riassunto: These conference proceedings examine such topics as: advances in III-V transistors (HEMTs and HBTs) for mm-wave applications; high speed laser diodes, optical modulators and photodetectors; and microwave and optoelectronic photonic crystal devices.
• Titolo autorizzato: 2000 International Symposium on High Performance Electron Devices for Microwave, Optoelectronic Applications
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910872667803321
• Lo trovi qui: Univ. Federico II