Formation of silicon nitride from the 19th to the 21st century : a comprehensive summary and guide to the world literature / / Raymond C. Sangster ; updated and revised by David J. Fisher

• Autore: Sangster Raymond C.
• Pubblicazione: [Pfäffikon], Switzerland : , : Trans Tech Publications Ltd, , 2015; ©2015
• Edizione: Second edition, revised and updated.
• Descrizione fisica: 1 online resource (1001 p.)
• Disciplina: 666
• Soggetto topico: Silicon nitride
• Persona (resp. second.): FisherDavid J.
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references at the end of each chapters.
• Nota di contenuto: Formation of Silicon Nitride from the 19th to the 21st Century; Preface; Table of Contents; Part A: In the Beginning; Part B: Technical Context of Silicon Nitride Formation; Part C: Si3N4 Products, Uses and Markets; Part D: Si3N4 by Reaction of Si(cr) Surfaces and N-Species; Part E: Si3N4 Powder Formation from Si(Powder)/N2(g); Part F: Fabrication of Reaction Bonded Silicon Nitride; Part G: Si3N4 from Si/N2 under Vigorous Conditions; Part H: Si3N4 Formation by Reaction of Si with N-Compounds; Part Í: Si3N4 by Nitridation of Si-O Based Materials ; Part J: Si3N4 Formation from Si-N Based MaterialsPart K: Comparative Overview and Summary of Si3N4 CVD; Part L: Si3N4 by CVD Nitridation of Si-H Compounds; Part M: Si3N4 by CVD Nitridation of Si Halides and Halosilanes; Part N: Si3N4 Formation in Si-C-N Systems; Part O: Si3N4 Formation in Si-N-X Systems, X = B, P, S, Fe, other
• Sommario/riassunto: The elements: Si, N, O, C and H, have strong chemical affinities for one another. Under the correct conditions, Si-N bonding will occur in almost any Si-N-(O/C/H), and many related, reaction systems; although Si-O and Si-C are formidable competitors to Si-N. The most favored Si-N compound is stoichiometric Si3N4. It comes in three common varieties. How they interrelate, how one finds them and (above all ) how one makes them - and how sometimes they just happen to form - are the subjects of this book, with due attention being paid to closely related matters. This revised second edition summariz
• Titolo autorizzato: Formation of silicon nitride from the 19th to the 21st century
• ISBN: 3-03826-901-8
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910810977803321
• Lo trovi qui: Univ. Federico II
• Serie: Materials science foundations ; ; Volumes 84-85.