Properties of semiconductor alloys : group-IV, III-V and II-VI semiconductors / / Sadao Adachi
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| Autore: |
Adachi Sadao <1950->
|
| Titolo: |
Properties of semiconductor alloys : group-IV, III-V and II-VI semiconductors / / Sadao Adachi
|
| Pubblicazione: | Chichester, West Sussex, U.K. ; ; Hoboken, N.J., : Wiley, 2009 |
| Descrizione fisica: | 1 online resource (424 p.) |
| Disciplina: | 621.3815/2 |
| Soggetto topico: | Semiconductors - Materials |
| Semiconductors - Analysis | |
| Silicon alloys | |
| Note generali: | Description based upon print version of record. |
| Nota di bibliografia: | Includes bibliographical references and index. |
| Nota di contenuto: | Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Abbreviations and Acronyms; Introductory Remarks; A.1 AN ALLOY AND A COMPOUND; A.2 GRIMM-SOMMERFELD RULE; A.3 AN INTERPOLATION SCHEME; REFERENCES; 1 Structural Properties; 1.1 IONICITY; 1.2 ELEMENTAL ISOTOPIC ABUNDANCE AND MOLECULAR WEIGHT; 1.3 CRYSTAL STRUCTURE; 1.3.1 Random Alloy; 1.3.2 Spontaneous Ordering; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 1.4 LATTICE CONSTANT AND RELATED PARAMETERS |
| 1.4.1 CuAu Alloy: Ordered and Disordered States1.4.2 Non-alloyed Semiconductor; 1.4.3 Semiconductor Alloy; (a) Group-IV semiconductor; (b) III-V semiconductor; (c) II-VI semiconductor; 1.5 COHERENT EPITAXY AND STRAIN PROBLEM; 1.5.1 Bilayer Model; 1.5.2 Elastic Strain and Lattice Deformation; 1.5.3 Critical Thickness; 1.6 STRUCTURAL PHASE TRANSITION; 1.7 CLEAVAGE PLANE; 1.7.1 Cleavage; 1.7.2 Surface Energy; REFERENCES; 2 Thermal Properties; 2.1 MELTING POINT AND RELATED PARAMETERS; 2.1.1 Phase Diagram; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy | |
| (c) II-VI semiconductor alloy2.1.2 Melting Point; 2.2 SPECIFIC HEAT; 2.2.1 Group-IV Semiconductor Alloy; 2.2.2 III-V Semiconductor Alloy; 2.2.3 II-VI Semiconductor Alloy; 2.3 DEBYE TEMPERATURE; 2.3.1 General Considerations; 2.3.2 Group-IV Semiconductor Alloy; 2.3.3 III-V Semiconductor Alloy; 2.3.4 II-VI Semiconductor Alloy; 2.4 THERMAL EXPANSION COEFFICIENT; 2.4.1 Group-IV Semiconductor Alloy; 2.4.2 III-V Semiconductor Alloy; 2.4.3 II-VI Semiconductor Alloy; 2.5 THERMAL CONDUCTIVITY AND DIFFUSIVITY; 2.5.1 Thermal Conductivity; (a) General considerations; (b) Group-IV semiconductor alloy | |
| (c) III-V semiconductor alloy(d) II-VI semiconductor alloy; 2.5.2 Thermal Diffusivity; (a) General considerations; (b) Alloy value; REFERENCES; 3 Elastic Properties; 3.1 ELASTIC CONSTANT; 3.1.1 General Considerations; 3.1.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 THIRD-ORDER ELASTIC CONSTANT; 3.3 YOUNG'S MODULUS, POISSON'S RATIO AND SIMILAR PROPERTIES; 3.3.1 Group-IV Semiconductor Alloy; 3.3.2 III-V Semiconductor Alloy | |
| 3.3.3 II-VI Semiconductor Alloy3.4 MICROHARDNESS; 3.4.1 Group-IV Semiconductor Alloy; 3.4.2 III-V Semiconductor Alloy; 3.4.3 II-VI Semiconductor Alloy; 3.5 SOUND VELOCITY; REFERENCES; 4 Lattice Dynamic Properties; 4.1 PHONON DISPERSION RELATIONSHIPS; 4.2 PHONON FREQUENCY; 4.2.1 General Considerations; 4.2.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.2.3 External Perturbation Effect; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.3 MODE GRÜNEISEN PARAMETER | |
| 4.3.1 Phonon Deformation Potential | |
| Sommario/riassunto: | The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III-V and II-VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III-N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or |
| Titolo autorizzato: | Properties of semiconductor alloys |
| ISBN: | 1-282-12352-1 |
| 9786612123528 | |
| 0-470-74438-3 | |
| 0-470-74439-1 | |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910877439303321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |
Serie:
Wiley series in materials for electronic and optoelectronic applications.