Multigate transistors for high frequency applications / / K. Sivasankaran and Partha Sharathi Mallick

• Autore: Sivasankaran K. <1977->
• Pubblicazione: Singapore : , : Springer, , [2023]; ©2023
• Edizione: 1st ed. 2023.
• Descrizione fisica: 1 online resource (98 pages)
• Disciplina: 780
• Soggetto topico: Metal oxide semiconductor field-effect transistors
• Persona (resp. second.): MallickPartha Sharathi
• Nota di bibliografia: Includes bibliographical references.
• Nota di contenuto: 1. Introduction -- 2. Rf Transistor and Design Challenges -- 3. Radio Frequency Stability Performance of Dg Mosfet -- 4. Radio Frequency Stability Performance of Dg Tunnel Fet -- 5. Radio Frequency Stability Performance of Finfet -- 6. Radio Frequency Stability Performance Of Silicon Nanowire Transistor -- 7. References.
• Sommario/riassunto: This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.
• Titolo autorizzato: Multigate transistors for high frequency applications
• ISBN: 9789819901579; 9789819901562
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 996546827903316
• Lo trovi qui: Univ. di Salerno
• Serie: Springer Tracts in Electrical and Electronics Engineering, . 2731-4219