Design of Shallow p-type Dopants in ZnO (Presentation) [[electronic resource] /] / Su-Huai Wei, J. Li, and Y. Yan

• Autore: Wei Su-Huai
• Pubblicazione: [Place of publication not identified], : Washington, D.C., : United States. Dept. of Energy, : Oak Ridge, Tenn., : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2008
• Descrizione fisica: 1 online resource (32 pages) : color illustrations
• Soggetto topico: Semiconductor doping; Doped semiconductors; Crystals - Defects
• Altri autori: LiJ YanYanfa
• Note generali: Published through the Information Bridge: DOE Scientific and Technical Information.; "May 2008."; Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008 in San Diego, California.; National Renewable Energy Laboratory (NREL), Golden, CO.
• Sommario/riassunto: ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.
• Altri titoli varianti: Design of Shallow p-type Dopants in ZnO
• Titolo autorizzato: Design of Shallow p-type Dopants in ZnO (Presentation)
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910698701403321
• Lo trovi qui: Univ. Federico II