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Fundamentals of RF and microwave transistor amplifiers [[electronic resource] /] / Inder Bahl
Fundamentals of RF and microwave transistor amplifiers [[electronic resource] /] / Inder Bahl
Autore Bahl I. J
Pubbl/distr/stampa Oxford, : Wiley, 2009
Descrizione fisica 1 online resource (697 p.)
Disciplina 621.3815/35
621.381535
Soggetto topico Amplifiers, Radio frequency
Microwave amplifiers
Transistor amplifiers
Soggetto genere / forma Electronic books.
ISBN 1-282-36840-0
9786612368400
0-470-46234-5
0-470-46231-0
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Fundamentals of RF and Microwave Transistor Amplifiers; Contents in Brief; Contents; Foreword; Preface; 1. Introduction; 1.1. Transistor Amplifier; 1.2. Early History of Transistor Amplifiers; 1.3. Benefits of Transistor Amplifiers; 1.4. Transistors; 1.5. Design of Amplifiers; 1.6. Amplifier Manufacturing Technologies; 1.7. Applications of Amplifiers; 1.8. Amplifier Cost; 1.9. Current Trends; 1.10. Book Organization; References; 2. Linear Network Analysis; 2.1. Impedance Matrix; 2.2. Admittance Matrix; 2.3. ABCD Parameters; 2.4. S-Parameters; 2.4.1. S-Parameters for a One-Port Network
2.5. Relationships Between Various Two-Port ParametersReferences; Problems; 3. Amplifier Characteristics and Definitions; 3.1. Bandwidth; 3.2. Power Gain; 3.3. Input and Output VSWR; 3.4. Output Power; 3.5. Power Added Efficiency; 3.6. Intermodulation Distortion; 3.6.1. IP3; 3.6.2. ACPR; 3.6.3. EVM; 3.7. Harmonic Power; 3.8. Peak-to-Average Ratio; 3.9. Combiner Efficiency; 3.10. Noise Characterization; 3.10.1. Noise Figure; 3.10.2. Noise Temperature; 3.10.3. Noise Bandwidth; 3.10.4. Optimum Noise Match; 3.10.5. Constant Noise Figure and Gain Circles; 3.10.6. Simultaneous Input and Noise Match
3.11. Dynamic Range3.12. Multistage Amplifier Characteristics; 3.12.1. Multistage IP3; 3.12.2. Multistage PAE; 3.12.3. Multistage NF; 3.13. Gate and Drain Pushing Factors; 3.14. Amplifier Temperature Coefficient; 3.15. Mean Time to Failure; References; Problems; 4. Transistors; 4.1. Transistor Types; 4.2. Silicon Bipolar Transistor; 4.2.1. Figure of Merit; 4.2.2. High-Frequency Noise Performance of Silicon BJT; 4.2.3. Power Performance; 4.3. GaAs MESFET; 4.3.1. Small-Signal Equivalent Circuit; 4.3.2. Figure of Merit; 4.3.3. High-Frequency Noise Properties of MESFETs
4.4. Heterojunction Field Effect Transistor4.4.1. High-Frequency Noise Properties of HEMTs; 4.4.2. Indium Phosphide pHEMTs; 4.5. Heterojunction Bipolar Transistors; 4.5.1. High-Frequency Noise Properties of HBTs; 4.5.2. SiGe Heterojunction Bipolar Transistors; 4.6. MOSFET; References; Problems; 5. Transistor Models; 5.1. Transistor Model Types; 5.1.1. Physics/Electromagnetic Theory Based Models; 5.1.2. Analytical or Hybrid Models; 5.1.3. Measurement Based Models; 5.2. MESFET Models; 5.2.1. Linear Models; 5.2.2. Nonlinear Models; 5.3. pHEMT Models; 5.3.1. Linear Models; 5.3.2. Nonlinear Models
5.4. HBT Model5.5. MOSFET Models; 5.6. BJT Models; 5.7. Transistor Model Scaling; 5.8. Source-Pull and Load-Pull Data; 5.8.1. Theoretical Load-Pull Data; 5.8.2. Measured Power and PAE Source Pull and Load Pull; 5.8.3. Measured IP3 Source and Load Impedance; 5.8.4. Source and Load Impedance Scaling; 5.9. Temperature-Dependent Models; References; Problems; 6. Matching Network Components; 6.1. Impedance Matching Elements; 6.2. Transmission Line Matching Elements; 6.2.1. Microstrip; 6.2.2. Coplanar Lines; 6.3. Lumped Elements; 6.3.1. Capacitors; 6.3.2. Inductors; 6.3.3. Resistors
6.4. Bond Wire Inductors
Record Nr. UNINA-9910139979603321
Bahl I. J  
Oxford, : Wiley, 2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Fundamentals of RF and microwave transistor amplifiers [[electronic resource] /] / Inder Bahl
Fundamentals of RF and microwave transistor amplifiers [[electronic resource] /] / Inder Bahl
Autore Bahl I. J
Pubbl/distr/stampa Oxford, : Wiley, 2009
Descrizione fisica 1 online resource (697 p.)
Disciplina 621.3815/35
621.381535
Soggetto topico Amplifiers, Radio frequency
Microwave amplifiers
Transistor amplifiers
ISBN 1-282-36840-0
9786612368400
0-470-46234-5
0-470-46231-0
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Fundamentals of RF and Microwave Transistor Amplifiers; Contents in Brief; Contents; Foreword; Preface; 1. Introduction; 1.1. Transistor Amplifier; 1.2. Early History of Transistor Amplifiers; 1.3. Benefits of Transistor Amplifiers; 1.4. Transistors; 1.5. Design of Amplifiers; 1.6. Amplifier Manufacturing Technologies; 1.7. Applications of Amplifiers; 1.8. Amplifier Cost; 1.9. Current Trends; 1.10. Book Organization; References; 2. Linear Network Analysis; 2.1. Impedance Matrix; 2.2. Admittance Matrix; 2.3. ABCD Parameters; 2.4. S-Parameters; 2.4.1. S-Parameters for a One-Port Network
2.5. Relationships Between Various Two-Port ParametersReferences; Problems; 3. Amplifier Characteristics and Definitions; 3.1. Bandwidth; 3.2. Power Gain; 3.3. Input and Output VSWR; 3.4. Output Power; 3.5. Power Added Efficiency; 3.6. Intermodulation Distortion; 3.6.1. IP3; 3.6.2. ACPR; 3.6.3. EVM; 3.7. Harmonic Power; 3.8. Peak-to-Average Ratio; 3.9. Combiner Efficiency; 3.10. Noise Characterization; 3.10.1. Noise Figure; 3.10.2. Noise Temperature; 3.10.3. Noise Bandwidth; 3.10.4. Optimum Noise Match; 3.10.5. Constant Noise Figure and Gain Circles; 3.10.6. Simultaneous Input and Noise Match
3.11. Dynamic Range3.12. Multistage Amplifier Characteristics; 3.12.1. Multistage IP3; 3.12.2. Multistage PAE; 3.12.3. Multistage NF; 3.13. Gate and Drain Pushing Factors; 3.14. Amplifier Temperature Coefficient; 3.15. Mean Time to Failure; References; Problems; 4. Transistors; 4.1. Transistor Types; 4.2. Silicon Bipolar Transistor; 4.2.1. Figure of Merit; 4.2.2. High-Frequency Noise Performance of Silicon BJT; 4.2.3. Power Performance; 4.3. GaAs MESFET; 4.3.1. Small-Signal Equivalent Circuit; 4.3.2. Figure of Merit; 4.3.3. High-Frequency Noise Properties of MESFETs
4.4. Heterojunction Field Effect Transistor4.4.1. High-Frequency Noise Properties of HEMTs; 4.4.2. Indium Phosphide pHEMTs; 4.5. Heterojunction Bipolar Transistors; 4.5.1. High-Frequency Noise Properties of HBTs; 4.5.2. SiGe Heterojunction Bipolar Transistors; 4.6. MOSFET; References; Problems; 5. Transistor Models; 5.1. Transistor Model Types; 5.1.1. Physics/Electromagnetic Theory Based Models; 5.1.2. Analytical or Hybrid Models; 5.1.3. Measurement Based Models; 5.2. MESFET Models; 5.2.1. Linear Models; 5.2.2. Nonlinear Models; 5.3. pHEMT Models; 5.3.1. Linear Models; 5.3.2. Nonlinear Models
5.4. HBT Model5.5. MOSFET Models; 5.6. BJT Models; 5.7. Transistor Model Scaling; 5.8. Source-Pull and Load-Pull Data; 5.8.1. Theoretical Load-Pull Data; 5.8.2. Measured Power and PAE Source Pull and Load Pull; 5.8.3. Measured IP3 Source and Load Impedance; 5.8.4. Source and Load Impedance Scaling; 5.9. Temperature-Dependent Models; References; Problems; 6. Matching Network Components; 6.1. Impedance Matching Elements; 6.2. Transmission Line Matching Elements; 6.2.1. Microstrip; 6.2.2. Coplanar Lines; 6.3. Lumped Elements; 6.3.1. Capacitors; 6.3.2. Inductors; 6.3.3. Resistors
6.4. Bond Wire Inductors
Record Nr. UNINA-9910831054003321
Bahl I. J  
Oxford, : Wiley, 2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Fundamentals of RF and microwave transistor amplifiers / / Inder Bahl
Fundamentals of RF and microwave transistor amplifiers / / Inder Bahl
Autore Bahl I. J
Pubbl/distr/stampa Oxford, : Wiley, 2009
Descrizione fisica 1 online resource (697 p.)
Disciplina 621.3815/35
621.381535
Soggetto topico Amplifiers, Radio frequency
Microwave amplifiers
Transistor amplifiers
ISBN 1-282-36840-0
9786612368400
0-470-46234-5
0-470-46231-0
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Fundamentals of RF and Microwave Transistor Amplifiers; Contents in Brief; Contents; Foreword; Preface; 1. Introduction; 1.1. Transistor Amplifier; 1.2. Early History of Transistor Amplifiers; 1.3. Benefits of Transistor Amplifiers; 1.4. Transistors; 1.5. Design of Amplifiers; 1.6. Amplifier Manufacturing Technologies; 1.7. Applications of Amplifiers; 1.8. Amplifier Cost; 1.9. Current Trends; 1.10. Book Organization; References; 2. Linear Network Analysis; 2.1. Impedance Matrix; 2.2. Admittance Matrix; 2.3. ABCD Parameters; 2.4. S-Parameters; 2.4.1. S-Parameters for a One-Port Network
2.5. Relationships Between Various Two-Port ParametersReferences; Problems; 3. Amplifier Characteristics and Definitions; 3.1. Bandwidth; 3.2. Power Gain; 3.3. Input and Output VSWR; 3.4. Output Power; 3.5. Power Added Efficiency; 3.6. Intermodulation Distortion; 3.6.1. IP3; 3.6.2. ACPR; 3.6.3. EVM; 3.7. Harmonic Power; 3.8. Peak-to-Average Ratio; 3.9. Combiner Efficiency; 3.10. Noise Characterization; 3.10.1. Noise Figure; 3.10.2. Noise Temperature; 3.10.3. Noise Bandwidth; 3.10.4. Optimum Noise Match; 3.10.5. Constant Noise Figure and Gain Circles; 3.10.6. Simultaneous Input and Noise Match
3.11. Dynamic Range3.12. Multistage Amplifier Characteristics; 3.12.1. Multistage IP3; 3.12.2. Multistage PAE; 3.12.3. Multistage NF; 3.13. Gate and Drain Pushing Factors; 3.14. Amplifier Temperature Coefficient; 3.15. Mean Time to Failure; References; Problems; 4. Transistors; 4.1. Transistor Types; 4.2. Silicon Bipolar Transistor; 4.2.1. Figure of Merit; 4.2.2. High-Frequency Noise Performance of Silicon BJT; 4.2.3. Power Performance; 4.3. GaAs MESFET; 4.3.1. Small-Signal Equivalent Circuit; 4.3.2. Figure of Merit; 4.3.3. High-Frequency Noise Properties of MESFETs
4.4. Heterojunction Field Effect Transistor4.4.1. High-Frequency Noise Properties of HEMTs; 4.4.2. Indium Phosphide pHEMTs; 4.5. Heterojunction Bipolar Transistors; 4.5.1. High-Frequency Noise Properties of HBTs; 4.5.2. SiGe Heterojunction Bipolar Transistors; 4.6. MOSFET; References; Problems; 5. Transistor Models; 5.1. Transistor Model Types; 5.1.1. Physics/Electromagnetic Theory Based Models; 5.1.2. Analytical or Hybrid Models; 5.1.3. Measurement Based Models; 5.2. MESFET Models; 5.2.1. Linear Models; 5.2.2. Nonlinear Models; 5.3. pHEMT Models; 5.3.1. Linear Models; 5.3.2. Nonlinear Models
5.4. HBT Model5.5. MOSFET Models; 5.6. BJT Models; 5.7. Transistor Model Scaling; 5.8. Source-Pull and Load-Pull Data; 5.8.1. Theoretical Load-Pull Data; 5.8.2. Measured Power and PAE Source Pull and Load Pull; 5.8.3. Measured IP3 Source and Load Impedance; 5.8.4. Source and Load Impedance Scaling; 5.9. Temperature-Dependent Models; References; Problems; 6. Matching Network Components; 6.1. Impedance Matching Elements; 6.2. Transmission Line Matching Elements; 6.2.1. Microstrip; 6.2.2. Coplanar Lines; 6.3. Lumped Elements; 6.3.1. Capacitors; 6.3.2. Inductors; 6.3.3. Resistors
6.4. Bond Wire Inductors
Record Nr. UNINA-9910878091903321
Bahl I. J  
Oxford, : Wiley, 2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Lumped elements for RF and microwave circuits / / Inder Bahl
Lumped elements for RF and microwave circuits / / Inder Bahl
Autore Bahl I. J
Edizione [1st ed.]
Pubbl/distr/stampa Boston, : Artech House, c2003
Descrizione fisica 1 online resource (508 p.)
Disciplina 621.381/32
Collana Artech House microwave library
Soggetto topico Lumped elements (Electronics)
Microwave integrated circuits
Radio frequency integrated circuits
Passive components
ISBN 1-58053-661-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto V -- Preface xi -- Acknowledgments xv -- Part I: Cellular Networks xvii -- 1 Introduction 1 -- 1.1 Mobile Wireless Networks 5 -- 1.2 Cellular Networks 6 -- 1.3 Ad Hoc Wireless Networks 10 -- 1.4 Location Management 11 -- 1.5 Wireless Routing Techniques 13 -- 2 Mobility Issues 17 -- 2.1 Introduction 17 -- 2.2 Mobility Models 18 -- 2.3 Mobility in 3G Systems 26 -- 3 Radio Resource Management 31 -- 3.1 Radio Propagation 32 -- 3.2 Radio Resource (Spectrum Allocation) 37 -- 3.3 RRM 43 -- 3.4 Handoff Process 52 -- 3.5 Managing Resource Allocation 55 -- 3.6 Emerging RRM Techniques 60.
3.7 Integrated RRM 63 -- 3.8 Summary 65 -- 4 Location Management 69 -- 4.1 Location Update 71 -- 4.2 Paging 75 -- 4.3 Intelligent Paging Scheme 78 -- 4.4 More Paging Schemes 84 -- 4.5 Intersystem Paging 87 -- 4.6 IP Micromobility and Paging 88 -- 4.7 Location Management 89 -- 4.8 LA Planning 97 -- 4.9 Conclusion 109 -- Part II: Ad Hoc Wireless Networks 115 -- 5 Overview 117 -- 5.1 Characteristics of Ad Hoc Networks 117 -- 5.2 Three Fundamental Design Choices 118 -- 6 MAC Techniques in Ad Hoc Networks 125 -- 6.1 MAC Protocols with Omnidirectional Antennas 125.
6.2 MAC Protocols with Directional Antennas 128 -- 6.3 Discussions 132 -- 7 Routing Protocols in Ad Hoc Wireless Networks 135 -- 7.1 Introduction 135 -- 7.2 Unicast Routing Protocols in Ad Hoc Networks 138 -- 7.3 Multicast Routing Protocols in Ad Hoc Networks 165 -- 7.4 Performance Comparisons of Unicast and Multicast Routing Protocols 168 -- 7.5 Discussion 170 -- Part III: Future Issues 177 -- 8 Routing in Next-Generation Wireless Networks 179 -- 8.1 UMTS All-IP Networks 179 -- 8.2 Routing in Distributed Wireless Sensor Networks 182 -- 8.3 Pervasive Routing 186 -- 9 Conclusion 191.
List of Acronyms 195 -- About the Authors 203 -- Index 205.
Record Nr. UNINA-9910810468603321
Bahl I. J  
Boston, : Artech House, c2003
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui