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The Fuzziness in Molecular, Supramolecular, and Systems Chemistry
The Fuzziness in Molecular, Supramolecular, and Systems Chemistry
Autore Gentili Pier
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020
Descrizione fisica 1 online resource (154 p.)
Soggetto topico Biology, life sciences
Research & information: general
Soggetto non controllato activation
activation energy
artificial intelligence
artificial neuron
chemical artificial intelligence
complexity
conformational fuzziness
conformational heterogeneity
conformations
d-TST
E:Z photoisomerization
Euler's formula for the exponential
fuzzy complex
fuzzy complexes
fuzzy logic
fuzzy proteins
fuzzy set theory
GCN4 mimetic
higher-order structures
human nervous system
in materio computing
intrinsically disordered protein
intrinsically disordered protein region
intrinsically disordered proteins
liquid-liquid phase transition
Maxwell-Boltzmann path
metamorphic proteins
moonlighting proteins
morpheeins
n/a
neuromorphic computing
peptides-DNA
photochromic compounds
photoelectrochemistry
promiscuity
protein dynamics
protein evolution
protein-nucleic acid interaction
protein-protein interaction
proteinaceous membrane-less organelle
qubit
solution kinetic
transitivity
Transitivity plot
transport phenomena
wide bandgap semiconductor
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910557495003321
Gentili Pier  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
Autore Verzellesi Giovanni
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 online resource (320 p.)
Soggetto topico Energy industries and utilities
History of engineering and technology
Technology: general issues
Soggetto non controllato 2DEG
AlGaN/GaN
AlGaN/GaN heterojunction
AlGaN/GaN heterostructures
AlN
AlN buffer layer
aluminum nitride
annealing temperature
auto-compensation
band structure
bias stability
blue and yellow luminescence
breakdown field
breakdown voltage
buffer layer
carbon doping
charge traps
compensation ratio
crystal growth
crystallite size
cubic and hexagonal structure
current collapse
density functional theory
density of states
digital signal processor
driving technology
dry processing
electrochromic device
electron lifetime
energy storage system
equivalent-circuit modeling
fabrication
first-principles
gallium nitride
gallium nitride (GaN)
GaN
GaN power HEMTs
GaN-based LED
GaN-HEMT mesa structures
gate bias modulation
heterogeneous integration
high electron mobility transistor
high electron mobility transistor (HEMT)
high electron-mobility transistor (HEMT)
high-electron mobility devices
high-electron mobility transistor
high-temperature
HTA
HVPE
indium oxide thin film
laser micromachining
laser processing
laser thermal separation
low defect density
low-resistance SiC substrate
magnetron sputtering
metal-oxide-semiconductor field effect transistor (MOSFET)
microwave frequency
MIS-HEMTs
n/a
NH3 growth interruption
nickel oxide
nitridation
nitrogen dioxide gas sensor
noise
non-polar
normally off
optical absorption
optical band gap
p-GaN gate
p-GaN gate HEMT
p-type doping
palladium catalyst
photovoltaic module
piezoelectric micromachined ultrasonic transducers
plasma surface treatment
polar
power conditioning system
pure β-Ga2O3
QST
radio frequency
radio frequency sputtering
ranging
rectifying electrode
sapphire
scattering-parameter measurements
Schottky barrier diode
Schottky barrier diodes
semi-polar
SiC
silicon carbide
silicon carbide (SiC)
SOI
solution method
Sr-doped β-Ga2O3
stealth dicing
strain relaxation
supercritical technology
synchronous buck converter
temperature
threshold voltage stability
time of flight (TOF)
time to digital converter circuit (TDC)
unidirectional operation
vanadium redox flow batteries
wafer dicing
wide bandgap semiconductor
wide-bandgap (WBG)
X-ray diffraction
X-ray imaging
X-ray photoelectron spectroscopy
X-ray sensor
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Wide Bandgap Based Devices
Record Nr. UNINA-9910576886103321
Verzellesi Giovanni  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui