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Feature Papers in Electronic Materials Section
| Feature Papers in Electronic Materials Section |
| Autore | Roccaforte Fabrizio |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (438 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology Energy industries & utilities |
| Soggetto non controllato |
vertical GaN
quasi-vertical GaN reliability trapping degradation MOS trench MOS threshold voltage nanomanufacturing high-throughput method material printing flexible bioelectronics nanomembrane hybrid integration GaAs InGaAs channel epitaxial lift-off HEMT van der Waals 3C-SiC stacking faults doping KOH etching silicon carbide radiation hardness proton and electron irradiation charge removal rate compensation irradiation temperature heteroepitaxy bulk growth compliant substrates defects stress cubic silicon carbide power electronics thin film iron-based superconductor pulsed laser deposition transmission electron microscopy diamond MPCVD growth electron microscopy chemical vapour deposition 2D materials MoS2 silica point defects optical fibers radiation effects 4H-SiC ohmic contact SIMS Ti3SiC2 simulation Schottky barrier Schottky diodes electrical characterization graphene absorption Fabry–Perot filter radio frequency sputtering CVD graphene GaN thermal management GaN-on-diamond CVD arrhythmia detection cardiovascular monitoring soft biosensors wearable sensors flexible electronics gate dielectric aluminum oxide interface traps instability insulators binary oxides high-κ dielectrics wide band gap semiconductors energy electronics ultra-wide bandgap diodes transistors gallium oxide Ga2O3 spinel ZnGa2O4 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557620303321 |
Roccaforte Fabrizio
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices : Design, Fabrication and Applications
| Wide Bandgap Based Devices : Design, Fabrication and Applications |
| Autore | Medjdoub Farid |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (242 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
GaN
high-electron-mobility transistor (HEMT) ultra-wide band gap GaN-based vertical-cavity surface-emitting laser (VCSEL) composition-graded AlxGa1−xN electron blocking layer (EBL) electron leakage GaN laser diode distributed feedback (DFB) surface gratings sidewall gratings AlGaN/GaN proton irradiation time-dependent dielectric breakdown (TDDB) reliability normally off power cycle test SiC micro-heater chip direct bonded copper (DBC) substrate Ag sinter paste wide band-gap (WBG) thermal resistance amorphous InGaZnO thin-film transistor nitrogen-doping buried-channel stability 4H-SiC turn-off loss ON-state voltage breakdown voltage (BV) IGBT wide-bandgap semiconductor high electron mobility transistors vertical gate structure normally-off operation gallium nitride asymmetric multiple quantum wells barrier thickness InGaN laser diodes optical absorption loss electron leakage current wide band gap semiconductors numerical simulation terahertz Gunn diode grooved-anode diode Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) vertical breakdown voltage buffer trapping effect gallium nitride (GaN) power switching device active power filter (APF) power quality (PQ) metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) recessed gate double barrier high-electron-mobility transistors copper metallization millimeter wave wide bandgap semiconductors flexible devices silver nanoring silver nanowire polyol method cosolvent tungsten trioxide film spin coating optical band gap morphology electrochromism self-align hierarchical nanostructures ZnO nanorod/NiO nanosheet photon extraction efficiency photonic emitter wideband HEMT power amplifier jammer system GaN 5G high electron mobility transistors (HEMT) new radio RF front-end AESA radars transmittance distortions optimization GaN-on-GaN schottky barrier diodes high-energy α-particle detection low voltage thick depletion width detectors |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910557351703321 |
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Medjdoub Farid
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||