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Micro- and Nanotechnology of Wide Bandgap Semiconductors
| Micro- and Nanotechnology of Wide Bandgap Semiconductors |
| Autore | Piotrowska Anna B |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (114 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
GaN HEMT
self-heating effect microwave power amplifier thermal impedance thermal time constant thermal equivalent circuit GaN crystal growth ammonothermal method HVPE ion implantation gallium nitride thermodynamics ultra-high-pressure annealing diffusion diffusion coefficients molecular beam epitaxy nitrides laser diode tunnel junction LTE AlN AlGaN/GaN interface state density conductance-frequency MISHEMT gallium nitride nanowires polarity Kelvin probe force microscopy selective area growth selective epitaxy AlGaN/GaN heterostructures edge effects effective diffusion length MOVPE nanowires AlGaN LEDs growth polarity |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557343303321 |
Piotrowska Anna B
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Organic Conductors
| Organic Conductors |
| Autore | Naito Toshio |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (418 p.) |
| Soggetto topico |
Technology: general issues
Chemical engineering |
| Soggetto non controllato |
organic π-radical
molecular conductor phthalocyanine three-dimensional network three-dimensional electronic system organic conductors bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) bis(ethylenediseleno)tetrathiafulvalene (BEST) bis(ethylenedithio)tetraselenafulvalene (BETS) electrical resistivity magnetic susceptibility X-ray analysis charge-ordered state quantum chemical calculations Madelung energy magnetic property reversible transformation spin ladder nodal line semimetal single-component molecular conductor conductivity DOS tight-binding model interacting electrons in one dimension electronic and lattice instabilities renormalization group method X-ray diffraction single crystal electron density molecular orbital single-component molecular conductors extended-TTF dithiolate ligands gold dithiolate complexes (BETS)2Fe1−xGaxCl4 π-d interaction NMR charge glass heat capacity electric current electric voltage Boson peak chirality tetrathiafulvalene crystal structures band structure calculations hydrogen bonding charge-transfer salts (TMTTF)2X deuteration anions charge transport tunnel junction MOCVD quantum well co-doping solar cells (TMTSF)8(I3)5 (TMTSF)5(I3)2 (TMTSF)4(I3)4·THF organic conductor crystal structure high pressure DFT MP2 organic superconductors Beechgard salts Maxwell-Garnett approximation high-Tc pressure effect Dirac electron system resistivity magnetoresistance synchrotron X-ray diffraction band calculation correlated electron materials layered organic conductor unconventional superconductivity vortex dynamics d-wave pairing symmetry superconducting gap structure magnetic field flux-flow resistivity charge-ordered insulator electric double layer transistor organic field-effect transistor π-d system Mott insulator strongly correlated electron system multiferroic dielectric photoconductor organic semiconductors molecular orbitals pyroelectricity temperature modulation molecular ferroelectrics radiative temperature control thermal diffusion model lithium niobate first-principles calculation density-functional theory charge ordering hybrid functional electronic structure nickel-dithiolene complex cycloalkane substituent crystalline organic charge-transfer complexes disordered systems overlap integrals extended Hückel approximation Dirac electrons zero-gap semiconductors merging of Dirac cones |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580206403321 |
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Naito Toshio
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Simulation and Modeling of Nanomaterials
| Simulation and Modeling of Nanomaterials |
| Autore | Bystrov Vladimir S |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (270 p.) |
| Soggetto topico |
Research & information: general
Physics |
| Soggetto non controllato |
single nanowires
silicon dual shells off-resonance absorption photocurrent magnetism transition-metal oxide clusters DFT calculations structure electronic properties LGD theory polarization nanoscale ferroelectrics kinetics homogeneous switching computer simulation fitting diphenylalanine peptide nanotubes self-assembly water molecules DFT molecular modelling semi-empirical methods chirality Ir-modified MoS2 decomposition components of SF6 adsorption and sensing atomistic simulation core–shell bi-magnetic nanoparticles Monte Carlo simulation interfacial exchange terahertz graphene plasmons Drude absorption polarization conversion yield surface plastic flow crystal plasticity polycrystalline aluminum dipeptides helical structures molecular modeling dipole moments tunnel junction machine learning III-nitride hydroxyapatite modeling density functional theory defects vacancies substitutions structural and optical properties band gap electronic density of states nanomaterials plasmon-induced transparency strontium titanate slow light iron doping hydroxyapatite bioceramics hybrid density functional X-ray absorption spectroscopy phenylalanine protein secondary structure optoelectronic devices nanostructured polymer film antireflection coating finite-difference time-domain method ferroelectrics heterostructures domains negative capacitance |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910585943503321 |
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Bystrov Vladimir S
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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