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Miniaturized Transistors
Miniaturized Transistors
Autore Grasser Tibor
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2019
Descrizione fisica 1 electronic resource (202 p.)
Soggetto non controllato MOSFET
total ionizing dose (TID)
low power consumption
process simulation
two-dimensional material
negative-capacitance
power consumption
technology computer aided design (TCAD)
thin-film transistors (TFTs)
band-to-band tunneling (BTBT)
nanowires
inversion channel
metal oxide semiconductor field effect transistor (MOSFET)
spike-timing-dependent plasticity (STDP)
field effect transistor
segregation
systematic variations
Sentaurus TCAD
indium selenide
nanosheets
technology computer-aided design (TCAD)
high-? dielectric
subthreshold bias range
statistical variations
fin field effect transistor (FinFET)
compact models
non-equilibrium Green's function
etching simulation
highly miniaturized transistor structure
compact model
silicon nanowire
surface potential
Silicon-Germanium source/drain (SiGe S/D)
nanowire
plasma-aided molecular beam epitaxy (MBE)
phonon scattering
mobility
silicon-on-insulator
drain engineered
device simulation
variability
semi-floating gate
synaptic transistor
neuromorphic system
theoretical model
CMOS
ferroelectrics
tunnel field-effect transistor (TFET)
SiGe
metal gate granularity
buried channel
ON-state
bulk NMOS devices
ambipolar
piezoelectrics
tunnel field effect transistor (TFET)
FinFETs
polarization
field-effect transistor
line edge roughness
random discrete dopants
radiation hardened by design (RHBD)
low energy
flux calculation
doping incorporation
low voltage
topography simulation
MOS devices
low-frequency noise
high-k
layout
level set
process variations
subthreshold
metal gate stack
electrostatic discharge (ESD)
ISBN 3-03921-011-4
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910346680003321
Grasser Tibor  
MDPI - Multidisciplinary Digital Publishing Institute, 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Radiation Tolerant Electronics
Radiation Tolerant Electronics
Autore Leroux Paul
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2019
Descrizione fisica 1 electronic resource (210 p.)
Soggetto non controllato single event effects
radiation-hardening-by-design (RHBD)
frequency divider by two
single event upset
Image processing
CMOS analog integrated circuits
FPGA
total ionizing dose (TID)
Impulse Sensitive Function
soft error
hardening by design
radiation hardening by design
X-rays
Single-Event Upsets (SEUs)
line buffer
heavy ions
VHDL
FPGA-based digital controller
radiation hardening by design (RHBD)
radiation hardening
SRAM-based FPGA
proton irradiation
ring oscillator
sensor readout IC
fault tolerance
space application
physical unclonable function
voltage controlled oscillator (VCO)
Ring Oscillators
analog single-event transient (ASET)
single event opset (SEU)
SEB
single event upsets
bipolar transistor
total ionizing dose
protons
triple modular redundancy (TMR)
gain degradation
space electronics
saturation effect
configuration memory
Co-60 gamma radiation
total ionization dose (TID)
frequency synthesizers
CMOS
PLL
TDC
single-event upsets (SEUs)
bandgap voltage reference (BGR)
4MR
single-shot
error rates
Radiation Hardening by Design
soft errors
heavy-ions
single-event effects (SEE)
single event transient (SET)
SEE testing
proton irradiation effects
RFIC
single event upset (SEU)
FMR
ionization
radiation tolerant
triplex-duplex
neutron irradiation effects
digital integrated circuits
single event gate rupture (SEGR)
power MOSFETs
ring-oscillator
selective hardening
voltage reference
nuclear fusion
TMR
gamma-rays
gamma ray
instrumentation amplifier
radiation effects
reference circuits
radiation-hardened
ISBN 3-03921-280-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910367565203321
Leroux Paul  
MDPI - Multidisciplinary Digital Publishing Institute, 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui