Miniaturized Transistors |
Autore | Grasser Tibor |
Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
Descrizione fisica | 1 electronic resource (202 p.) |
Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
ISBN | 3-03921-011-4 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910346680003321 |
Grasser Tibor | ||
MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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Radiation Tolerant Electronics |
Autore | Leroux Paul |
Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
Descrizione fisica | 1 electronic resource (210 p.) |
Soggetto non controllato |
single event effects
radiation-hardening-by-design (RHBD) frequency divider by two single event upset Image processing CMOS analog integrated circuits FPGA total ionizing dose (TID) Impulse Sensitive Function soft error hardening by design radiation hardening by design X-rays Single-Event Upsets (SEUs) line buffer heavy ions VHDL FPGA-based digital controller radiation hardening by design (RHBD) radiation hardening SRAM-based FPGA proton irradiation ring oscillator sensor readout IC fault tolerance space application physical unclonable function voltage controlled oscillator (VCO) Ring Oscillators analog single-event transient (ASET) single event opset (SEU) SEB single event upsets bipolar transistor total ionizing dose protons triple modular redundancy (TMR) gain degradation space electronics saturation effect configuration memory Co-60 gamma radiation total ionization dose (TID) frequency synthesizers CMOS PLL TDC single-event upsets (SEUs) bandgap voltage reference (BGR) 4MR single-shot error rates Radiation Hardening by Design soft errors heavy-ions single-event effects (SEE) single event transient (SET) SEE testing proton irradiation effects RFIC single event upset (SEU) FMR ionization radiation tolerant triplex-duplex neutron irradiation effects digital integrated circuits single event gate rupture (SEGR) power MOSFETs ring-oscillator selective hardening voltage reference nuclear fusion TMR gamma-rays gamma ray instrumentation amplifier radiation effects reference circuits radiation-hardened |
ISBN | 3-03921-280-X |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910367565203321 |
Leroux Paul | ||
MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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