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Radiation Sensing: Design and Deployment of Sensors and Detectors
Radiation Sensing: Design and Deployment of Sensors and Detectors
Autore Gamage Kelum
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Descrizione fisica 1 electronic resource (157 p.)
Soggetto topico Technology: general issues
Soggetto non controllato passive radiation detection
gamma-ray
neutron
illicit trafficking
national security
non-proliferation
ground-penetrating radar
gamma ray detector
sensor fusion
nuclear wastes
nuclear decommissioning
radiation detection
radiological characterisation
rheology
rapid prototyping
radiation sensing technologies
partial discharges
scintillations
air insulation
photomultiplier
COTS commercial MAPS
radiation response
integral time
gain
high-energy α-particle detection
low voltage
thick depletion width detectors
remote-depth profiling
gamma spectral analysis
Bayesian inference
uncertainty estimation
radioactive nuclear waste
radiological characterization
low-resolution detector
remote depth profiling
radioisotope identification
low-level radioactive contaminants
spectrum-to-dose conversion operator
G(E) function
gaussian process regression
dose rate uncertainty
real-time dosimetry
operational quantities
plastic gamma spectra
energy broadening correction
Compton edge reconstruction
deep learning
deep autoencoder
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Radiation Sensing
Record Nr. UNINA-9910557647803321
Gamage Kelum  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Wide Bandgap Based Devices : Design, Fabrication and Applications
Wide Bandgap Based Devices : Design, Fabrication and Applications
Autore Medjdoub Farid
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Descrizione fisica 1 electronic resource (242 p.)
Soggetto topico Technology: general issues
Soggetto non controllato GaN
high-electron-mobility transistor (HEMT)
ultra-wide band gap
GaN-based vertical-cavity surface-emitting laser (VCSEL)
composition-graded AlxGa1−xN electron blocking layer (EBL)
electron leakage
GaN laser diode
distributed feedback (DFB)
surface gratings
sidewall gratings
AlGaN/GaN
proton irradiation
time-dependent dielectric breakdown (TDDB)
reliability
normally off
power cycle test
SiC micro-heater chip
direct bonded copper (DBC) substrate
Ag sinter paste
wide band-gap (WBG)
thermal resistance
amorphous InGaZnO
thin-film transistor
nitrogen-doping
buried-channel
stability
4H-SiC
turn-off loss
ON-state voltage
breakdown voltage (BV)
IGBT
wide-bandgap semiconductor
high electron mobility transistors
vertical gate structure
normally-off operation
gallium nitride
asymmetric multiple quantum wells
barrier thickness
InGaN laser diodes
optical absorption loss
electron leakage current
wide band gap semiconductors
numerical simulation
terahertz Gunn diode
grooved-anode diode
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs)
vertical breakdown voltage
buffer trapping effect
gallium nitride (GaN)
power switching device
active power filter (APF)
power quality (PQ)
metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT)
recessed gate
double barrier
high-electron-mobility transistors
copper metallization
millimeter wave
wide bandgap semiconductors
flexible devices
silver nanoring
silver nanowire
polyol method
cosolvent
tungsten trioxide film
spin coating
optical band gap
morphology
electrochromism
self-align
hierarchical nanostructures
ZnO nanorod/NiO nanosheet
photon extraction efficiency
photonic emitter
wideband
HEMT
power amplifier
jammer system
GaN 5G
high electron mobility transistors (HEMT)
new radio
RF front-end
AESA radars
transmittance
distortions
optimization
GaN-on-GaN
schottky barrier diodes
high-energy α-particle detection
low voltage
thick depletion width detectors
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Wide Bandgap Based Devices
Record Nr. UNINA-9910557351703321
Medjdoub Farid  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui