Radiation Sensing: Design and Deployment of Sensors and Detectors |
Autore | Gamage Kelum |
Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
Descrizione fisica | 1 electronic resource (157 p.) |
Soggetto topico | Technology: general issues |
Soggetto non controllato |
passive radiation detection
gamma-ray neutron illicit trafficking national security non-proliferation ground-penetrating radar gamma ray detector sensor fusion nuclear wastes nuclear decommissioning radiation detection radiological characterisation rheology rapid prototyping radiation sensing technologies partial discharges scintillations air insulation photomultiplier COTS commercial MAPS radiation response integral time gain high-energy α-particle detection low voltage thick depletion width detectors remote-depth profiling gamma spectral analysis Bayesian inference uncertainty estimation radioactive nuclear waste radiological characterization low-resolution detector remote depth profiling radioisotope identification low-level radioactive contaminants spectrum-to-dose conversion operator G(E) function gaussian process regression dose rate uncertainty real-time dosimetry operational quantities plastic gamma spectra energy broadening correction Compton edge reconstruction deep learning deep autoencoder |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Altri titoli varianti | Radiation Sensing |
Record Nr. | UNINA-9910557647803321 |
Gamage Kelum | ||
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Wide Bandgap Based Devices : Design, Fabrication and Applications |
Autore | Medjdoub Farid |
Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
Descrizione fisica | 1 electronic resource (242 p.) |
Soggetto topico | Technology: general issues |
Soggetto non controllato |
GaN
high-electron-mobility transistor (HEMT) ultra-wide band gap GaN-based vertical-cavity surface-emitting laser (VCSEL) composition-graded AlxGa1−xN electron blocking layer (EBL) electron leakage GaN laser diode distributed feedback (DFB) surface gratings sidewall gratings AlGaN/GaN proton irradiation time-dependent dielectric breakdown (TDDB) reliability normally off power cycle test SiC micro-heater chip direct bonded copper (DBC) substrate Ag sinter paste wide band-gap (WBG) thermal resistance amorphous InGaZnO thin-film transistor nitrogen-doping buried-channel stability 4H-SiC turn-off loss ON-state voltage breakdown voltage (BV) IGBT wide-bandgap semiconductor high electron mobility transistors vertical gate structure normally-off operation gallium nitride asymmetric multiple quantum wells barrier thickness InGaN laser diodes optical absorption loss electron leakage current wide band gap semiconductors numerical simulation terahertz Gunn diode grooved-anode diode Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) vertical breakdown voltage buffer trapping effect gallium nitride (GaN) power switching device active power filter (APF) power quality (PQ) metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) recessed gate double barrier high-electron-mobility transistors copper metallization millimeter wave wide bandgap semiconductors flexible devices silver nanoring silver nanowire polyol method cosolvent tungsten trioxide film spin coating optical band gap morphology electrochromism self-align hierarchical nanostructures ZnO nanorod/NiO nanosheet photon extraction efficiency photonic emitter wideband HEMT power amplifier jammer system GaN 5G high electron mobility transistors (HEMT) new radio RF front-end AESA radars transmittance distortions optimization GaN-on-GaN schottky barrier diodes high-energy α-particle detection low voltage thick depletion width detectors |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Altri titoli varianti | Wide Bandgap Based Devices |
Record Nr. | UNINA-9910557351703321 |
Medjdoub Farid | ||
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|